公开(公告)号：US10457546B2

公开(公告)日：2019-10-29

申请号：US15921203

申请日：2018-03-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Sheng Lin ,  Weng-Yi Chen ,  Kuan-Yu Wang ,  Chih-Wei Liu

IPC: B81C1/00 ,  B81B3/00 ,  H04R19/00 ,  H04R19/04

Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

公开(公告)号：US20180201498A1

公开(公告)日：2018-07-19

申请号：US15921203

申请日：2018-03-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Sheng Lin ,  Weng-Yi Chen ,  Kuan-Yu Wang ,  Chih-Wei Liu

IPC: B81B3/00 ,  H04R19/00 ,  B81C1/00

CPC classification number: B81B3/0075 ,  B81B2201/0257 ,  B81B2207/115 ,  B81C1/00158 ,  B81C1/00785 ,  H04R19/005 ,  H04R19/04 ,  H04R2201/003 ,  H04R2307/027

Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

公开(公告)号：US09950920B2

公开(公告)日：2018-04-24

申请号：US15003913

申请日：2016-01-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Sheng Lin ,  Weng-Yi Chen ,  Kuan-Yu Wang ,  Chih-Wei Liu

IPC: B81B3/00 ,  B81C1/00 ,  H04R19/00

CPC classification number: B81B3/0075 ,  B81B2201/0257 ,  B81B2207/115 ,  B81C1/00158 ,  B81C1/00785 ,  H04R19/005 ,  H04R19/04 ,  H04R2201/003 ,  H04R2307/027

Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

公开(公告)号：US20170210615A1

公开(公告)日：2017-07-27

申请号：US15003913

申请日：2016-01-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Sheng Lin ,  Weng-Yi Chen ,  Kuan-Yu Wang ,  Chih-Wei Liu

IPC: B81B3/00 ,  H04R19/00 ,  B81C1/00

CPC classification number: B81B3/0075 ,  B81B2201/0257 ,  B81B2207/115 ,  B81C1/00158 ,  B81C1/00785 ,  H04R19/005 ,  H04R19/04 ,  H04R2201/003 ,  H04R2307/027

Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.