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    Micro-electro-mechanical system structure and method for forming the same
    1.
    发明授权
    Micro-electro-mechanical system structure and method for forming the same 有权

    公开(公告)号：US10457546B2

    公开(公告)日：2019-10-29

    申请号：US15921203

    申请日：2018-03-14

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Yuan-Sheng Lin ,  Weng-Yi Chen ,  Kuan-Yu Wang ,  Chih-Wei Liu

    IPC: B81C1/00 ,  B81B3/00 ,  H04R19/00 ,  H04R19/04

    Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

    Micro-electro-mechanical system structure and method for fabricating the same
    3.
    发明授权
    Micro-electro-mechanical system structure and method for fabricating the same 有权

    公开(公告)号：US10737932B2

    公开(公告)日：2020-08-11

    申请号：US16284735

    申请日：2019-02-25

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Yuan-Sheng Lin ,  Jung-Hao Chang ,  Chang-Sheng Hsu ,  Weng-Yi Chen

    IPC: B81B7/00 ,  B81C1/00

    Abstract: A MEMS structure includes a substrate, a dielectric layer, a membrane, a backplate, and a blocking layer. The substrate has a through-hole. The dielectric layer is disposed on the substrate and has a cavity in communication with the through-hole. The membrane has at least one vent hole, is embedded in the dielectric layer and together with the dielectric layer defines a first chamber that communicates with the through-hole. The backplate is disposed on the dielectric layer. One end of the blocking layer is embedded in the dielectric layer, and the other end of the blocking layer extends into the cavity; the blocking layer is spatially isolated from the membrane and at least partially overlaps with the at least one vent hole.

    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体结构及其制造方法

    公开(公告)号：US20160229692A1

    公开(公告)日：2016-08-11

    申请号：US14643183

    申请日：2015-03-10

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Yuan-Sheng Lin ,  Chang-Sheng Hsu ,  Meng-Jia Lin ,  Shih-Wei Li ,  Yan-Da Chen

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00238 ,  B81B2203/0127 ,  B81C2203/0792

    Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a base substrate and a MEMS structure. The base substrate comprises a CMOS structure. The MEMS structure is formed on the base substrate adjacent to the CMOS structure. The MEMS structure is connected to the CMOS structure. The MEMS structure comprises a membrane and a backplate. The base substrate has a cavity corresponding to the MEMS structure.

    Abstract translation: 提供半导体结构及其制造方法。 半导体结构包括基底和MEMS结构。 基底包括CMOS结构。 MEMS结构形成在与CMOS结构相邻的基底基板上。 MEMS结构连接到CMOS结构。 MEMS结构包括膜和背板。 基底衬底具有对应于MEMS结构的空腔。

    MICROELECTROMECHANICAL SYSTEM MICROPHONE
    8.
    发明申请
    MICROELECTROMECHANICAL SYSTEM MICROPHONE 有权
    微电子系统麦克风

    公开(公告)号：US20160212551A1

    公开(公告)日：2016-07-21

    申请号：US14630620

    申请日：2015-02-24

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chang-Sheng Hsu ,  Yuan-Sheng Lin ,  Wei-Hua Fang ,  Kuan-Yu Wang ,  Yan-Da Chen

    IPC: H04R23/00 ,  B81B3/00

    CPC classification number: H04R23/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00182 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

    Abstract: A microelectromechanical system microphone includes a semiconductor-on-insulator structure, a plurality of resistors, a plurality of first openings, and a vent hole. The semiconductor-on-insulator structure includes a substrate, an insulating layer and a semiconductor layer. The resistors are formed in the semiconductor layer, the first openings are formed in the semiconductor layer, and the vent hole is formed in the insulating layer and the substrate. The resistors are connected to each other to form a resistor pattern, and the first openings are all formed within the resistor pattern.

    Abstract translation: 微机电系统麦克风包括绝缘体上半导体结构，多个电阻器，多个第一开口和通气孔。 绝缘体上半导体结构包括衬底，绝缘层和半导体层。 电阻器形成在半导体层中，第一开口形成在半导体层中，并且通气孔形成在绝缘层和基板中。 电阻器彼此连接以形成电阻器图案，并且第一开口都形成在电阻器图案内。

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