公开(公告)号：US20140038399A1

公开(公告)日：2014-02-06

申请号：US14054839

申请日：2013-10-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Feng-Yi Chang ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Shang-Yuan Tsai ,  Chih-Wen Feng ,  Shui-Yen Lu ,  Ching-Pin Hsu

IPC: H01L21/308

CPC classification number: H01L21/308 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816

Abstract: A method for fabricating an aperture is disclosed. The method includes the steps of: forming a hard mask containing carbon on a surface of a semiconductor substrate; and using a non-oxygen element containing gas to perform a first etching process for forming a first aperture in the hard mask. Before forming the hard mask, a gate which includes a contact etch stop layer and a dielectric layer is formed on the semiconductor substrate.

Abstract translation: 公开了一种制造孔的方法。 该方法包括以下步骤：在半导体衬底的表面上形成含有碳的硬掩模; 并且使用含有气体的非氧元素进行用于在硬掩模中形成第一孔的第一蚀刻工艺。 在形成硬掩模之前，在半导体衬底上形成包括接触蚀刻停止层和电介质层的栅极。