公开(公告)号：US20190139971A1

公开(公告)日：2019-05-09

申请号：US15808019

申请日：2017-11-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Chang LIU ,  Zhen CHEN ,  Shen-De WANG ,  Chuan SUN ,  Wei TA ,  Wang XIANG

IPC: H01L27/11531 ,  H01L27/11521 ,  H01L29/423 ,  H01L29/788 ,  H01L21/28 ,  H01L21/3215 ,  H01L21/266 ,  H01L29/66

Abstract: A method for forming a semiconductor device is provided, including providing a substrate having a first area comprising first semiconductor structures and a second area, wherein one of the first semiconductor structures comprises a memory gate made of a first polysilicon layer, and a second semiconductor structure comprises a second polysilicon layer disposed within the second area on the substrate; forming an organic material layer on the first semiconductor structures within the first area and on the second polysilicon layer within the second area; and patterning the organic material layer to form a patterned organic material layer, and the organic material layer exposing the memory gates of the first semiconductor structures, wherein a first pre-determined region and a second pre-determined region at the substrate are covered by the patterned organic material layer.