公开(公告)号：US09786489B1

公开(公告)日：2017-10-10

申请号：US15461486

申请日：2017-03-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming Sheng Xu ,  Ching-Long Tsai ,  Hua-Kuo Lee ,  Guangjun Huang

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/02063 ,  H01L21/76807 ,  H01L2224/45147 ,  H01L2924/01029 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335

Abstract: A method of cleaning post-etch residues on a copper line includes providing a copper line which is divided into a first region and a second region. A dielectric layer is formed on the copper line. After that, the dielectric layer is etched to form openings in the dielectric layer. A number of openings within the first region is more than a number of openings in the second region. During the etching process, a potential difference is formed between the first region and the second region of the copper line. Finally, the dielectric layer and the copper line are cleaned by a solution with a PH value. The PH value has a special relation with the potential difference.