公开(公告)号：US20180366316A1

公开(公告)日：2018-12-20

申请号：US15623186

申请日：2017-06-14

Applicant: United Microelectronics Corp.

Inventor： Chun-Jung Wang ,  Chia-Ming Lee ,  Tsung-Hsun Tsai ,  Kuo-Wei Chih ,  Chia-Yen Hsu

IPC: H01L21/02 ,  B08B3/08 ,  B08B3/10

Abstract: A method is provided for cleaning a semiconductor structure. The method includes performing a rinse process of CO2 with water (CO2W) process over the semiconductor structure; and performing a standard clean (SC) process over the semiconductor structure with an overlapping period with the step of performing the rinse process of CO2W.

公开(公告)号：US20170207079A1

公开(公告)日：2017-07-20

申请号：US14996238

申请日：2016-01-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Ming Lee ,  Kuo-Wei Chih ,  Chen-Hsu Hung ,  Chun-Li Lin ,  Chia-Yen Hsu ,  Tsung-Hsun Tsai ,  Po-Lun Cheng

IPC: H01L21/02 ,  B08B3/08 ,  B08B3/02

CPC classification number: H01L21/02057 ,  B08B3/10 ,  H01L21/67051

Abstract: A substrate cleaning method is provided. A substrate is provided, followed by performing a first pre-cleaning process with a first rotation speed and a first duration time. After the first pre-cleaning process, a second pre-cleaning process is performed with a second rotation speed and a second duration time, wherein the second rotation speed is greater than the first rotation speed. After the second pre-cleaning process, a cleaning process is performed by using a chemical agent with a cleaning rotation speed.