METHOD FOR FABRICATING POLY-INSULATOR-POLY CAPACITOR

    公开(公告)号:US20220376037A1

    公开(公告)日:2022-11-24

    申请号:US17882596

    申请日:2022-08-07

    Inventor: LINGGANG FANG

    Abstract: A method for forming a poly-insulator-poly (PIP) capacitor is disclosed. A semiconductor substrate having a capacitor forming region is provided. A first capacitor dielectric layer is formed on the capacitor forming region. A first poly electrode is formed on the first capacitor dielectric layer. A second capacitor dielectric layer is formed on the first poly electrode. A second poly electrode is formed on the second capacitor dielectric layer. A third poly electrode is formed adjacent to a first sidewall of the second poly electrode. A third capacitor dielectric layer is formed between the third poly electrode and the second poly electrode. A fourth poly electrode is formed adjacent to a second sidewall of the second poly electrode that is opposite to the first sidewall. A fourth capacitor dielectric layer is formed between the fourth poly electrode and the second poly electrode.

    DEVICE COMPRISING CAPACITOR AND FORMING METHOD THEREOF

    公开(公告)号:US20190057968A1

    公开(公告)日:2019-02-21

    申请号:US15697459

    申请日:2017-09-07

    Inventor: LINGGANG FANG

    Abstract: A device including a capacitor includes an isolation structure, a first control gate, a first selective gate and a first dielectric layer. The isolation structure is disposed in a substrate. The first control gate and the first selective gate are disposed directly above the isolation structure. The first dielectric layer is vertically sandwiched by the first control gate and the first selective gate, thereby constituting the capacitor. The present invention also provides a method of forming the device including the capacitor.

    POLY-INSULATOR-POLY CAPACITOR AND FABRICATION METHOD THEREOF

    公开(公告)号:US20220181432A1

    公开(公告)日:2022-06-09

    申请号:US17142268

    申请日:2021-01-06

    Inventor: LINGGANG FANG

    Abstract: A poly-insulator-poly (PIP) capacitor including a substrate having a capacitor forming region; a first capacitor dielectric layer on the capacitor forming region; a first poly electrode on the first capacitor dielectric layer; a second capacitor dielectric layer on the first poly electrode; and a second poly electrode on the second capacitor dielectric layer. A third poly electrode is disposed adjacent to a first sidewall of the second poly electrode. A third capacitor dielectric layer is disposed between the third poly electrode and the second poly electrode. A fourth poly electrode is disposed adjacent to a second sidewall of the second poly electrode opposite to the first sidewall. A fourth capacitor dielectric layer is disposed between the fourth poly electrode and the second poly electrode.

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