公开(公告)号：US09966465B1

公开(公告)日：2018-05-08

申请号：US15631529

申请日：2017-06-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hock-Chun Chin ,  Lan-Xiang Wang ,  Hong Liao ,  Chao Jiang ,  Chow-Yee Lim

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/423

CPC classification number: H01L29/78391 ,  H01L21/28282 ,  H01L21/28291 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/516 ,  H01L29/7883 ,  H01L29/792

Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a substrate, a first dielectric layer, a charge trapping layer, a ferroelectric material layer, and a gate layer. The first dielectric layer is disposed on the substrate, the charge trapping layer is disposed on the first dielectric layer, the ferroelectric material layer is disposed on the charge trapping layer, and the gate layer is disposed on the ferroelectric material layer.