公开(公告)号：US09825039B1

公开(公告)日：2017-11-21

申请号：US15296922

申请日：2016-10-18

Applicant: United Microelectronics Corp.

Inventor： Po-Hsieh Lin ,  Yi-Chuen Eng ,  Szu-Hao Lai ,  Ming-Chih Chen

IPC: H01L29/66 ,  H01L27/108 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L21/8234

CPC classification number: H01L27/10802 ,  H01L21/823431 ,  H01L21/823487 ,  H01L27/088 ,  H01L27/10844 ,  H01L27/10873 ,  H01L29/78642

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor body, a first doped region, a second doped region, a gate and a dielectric layer. The semiconductor body is disposed on a dielectric substrate and has a protrusion portion, a first portion and a second portion. The first portion and the second portion are respectively disposed at two opposite sides of the protrusion portion. The first doped region is disposed in a top of the protrusion portion. The second doped region is disposed in an end of the first portion far away from the protrusion portion. The gate is disposed on the first portion and adjacent to the protrusion portion. The dielectric layer is disposed between the gate and the protrusion portion, and between the gate and the first portion.

公开(公告)号：US20170309708A1

公开(公告)日：2017-10-26

申请号：US15169753

申请日：2016-06-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： YI CHUEN ENG ,  Teng-Chuan Hu ,  I-Chang Wang ,  Wei-Chih Chen ,  Ming-Chih Chen

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/78

CPC classification number: H01L29/78 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/7835 ,  H01L29/7843 ,  H01L29/7848

Abstract: A field effect transistor is provided in the present invention with an active area including a source region, a drain region, and a channel region. The width of the channel region is larger than the width of the source/drain regions, and at least one of the source region and the drain region is comb-shaped.