公开(公告)号：US20210351294A1

公开(公告)日：2021-11-11

申请号：US16896233

申请日：2020-06-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Hsin Huang ,  Chen-An Kuo ,  Po-Chun Lai

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L21/762

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. A top of the isolation structure includes a flat surface, and a bottom of the isolation structure includes a curved surface.

公开(公告)号：US11817496B2

公开(公告)日：2023-11-14

申请号：US17515573

申请日：2021-11-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Hsin Huang ,  Chen-An Kuo ,  Po-Chun Lai

IPC: H01L29/94 ,  H01L29/76 ,  H01L31/062 ,  H01L29/78 ,  H01L29/10 ,  H01L21/762 ,  H01L29/06 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/7816 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/66681

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. The isolation structure includes a curved bottom surface.

公开(公告)号：US11195948B2

公开(公告)日：2021-12-07

申请号：US16896233

申请日：2020-06-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Hsin Huang ,  Chen-An Kuo ,  Po-Chun Lai

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/113 ,  H01L29/78 ,  H01L29/10 ,  H01L21/762 ,  H01L29/06 ,  H01L29/66 ,  H01L29/08

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. A top of the isolation structure includes a flat surface, and a bottom of the isolation structure includes a curved surface.