公开(公告)号：US11476410B2

公开(公告)日：2022-10-18

申请号：US16997922

申请日：2020-08-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chun Chen ,  Yen-Chun Liu ,  Ya-Sheng Feng ,  Chiu-Jung Chiu ,  I-Ming Tseng ,  Yi-An Shih ,  Yi-Hui Lee ,  Chung-Liang Chu ,  Hsiu-Hao Hu

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

Abstract: A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.

公开(公告)号：US20220029087A1

公开(公告)日：2022-01-27

申请号：US16997922

申请日：2020-08-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chun Chen ,  Yen-Chun Liu ,  Ya-Sheng Feng ,  Chiu-Jung Chiu ,  I-Ming Tseng ,  Yi-An Shih ,  Yi-Hui Lee ,  Chung-Liang Chu ,  Hsiu-Hao Hu

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.