公开(公告)号：US20240130254A1

公开(公告)日：2024-04-18

申请号：US18074548

申请日：2022-12-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Min TING ,  Chuan-Fu WANG ,  Yu-Huan YEH

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1226 ,  H01L27/2463 ,  H01L45/1253 ,  H01L45/16

Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first electrode, a second electrode on one side of the first electrode, and a resistive switching film between the first electrode and the second electrode. The first electrode, the resistive switching film and the second electrode are arranged along the first direction. The second semiconductor structure includes a first via and a first metal layer on the first via along a second direction and electrically connected to the first via. The first direction is perpendicular to the second direction. An upper surface of the first electrode, an upper surface of the second electrode, an upper surface of the resistive switching film and an upper surface of the first metal layer are coplanar.