公开(公告)号：US11201134B2

公开(公告)日：2021-12-14

申请号：US16853714

申请日：2020-04-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yonghui Gao ,  Yi Liu ,  Guohai Zhang

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/3105

Abstract: A method of manufacturing a semiconductor device includes the following steps. A device wafer having a product-obtaining part and an edge part surrounding the product-obtaining part is provided. A passivation layer is formed to cover the device wafer. A first oxide cap layer is formed to cover the passivation layer. An edge trimming process is performed to polish an edge part of the first oxide cap layer, an edge part of the passivation layer and the edge part of the device wafer. A removing process is performed to remove the first oxide cap layer after the edge trimming process is performed. A second oxide cap layer is formed to cover the first oxide cap layer and the edge part of the device wafer.