公开(公告)号：US11844291B2

公开(公告)日：2023-12-12

申请号：US17353757

申请日：2021-06-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan Zhou ,  Xian Feng Du ,  Guoan Du ,  Guohai Zhang

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/063 ,  H10N70/24 ,  H10N70/826 ,  H10N70/841

Abstract: A semiconductor memory device includes a substrate having a first interlayer dielectric layer thereon; a lower metal interconnect layer in the first interlayer dielectric layer; a conductive via disposed on the lower metal interconnect layer; a bottom electrode disposed on the conductive via; a dielectric data storage layer having variable resistance disposed on the bottom electrode; a top electrode disposed on the dielectric data storage layer; and a protective layer covering sidewalls of the top electrode, the dielectric data storage layer, and the bottom electrode. The protective layer includes an annular, upwardly protruding portion around a perimeter of the top electrode.

公开(公告)号：US12096704B2

公开(公告)日：2024-09-17

申请号：US18383473

申请日：2023-10-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan Zhou ,  Xian Feng Du ,  Guoan Du ,  Guohai Zhang

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/063 ,  H10N70/24 ,  H10N70/826 ,  H10N70/841

Abstract: A semiconductor memory device includes a substrate having a first interlayer dielectric layer thereon; a lower metal interconnect layer in the first interlayer dielectric layer; a conductive via disposed on the lower metal interconnect layer; a bottom electrode disposed on the conductive via; a dielectric data storage layer having variable resistance disposed on the bottom electrode; a top electrode disposed on the dielectric data storage layer; and a protective layer covering sidewalls of the top electrode, the dielectric data storage layer, and the bottom electrode. The protective layer includes an annular, upwardly protruding portion around a perimeter of the top electrode.