公开(公告)号：US20160020246A1

公开(公告)日：2016-01-21

申请号：US14332346

申请日：2014-07-15

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Shou-Guo WANG ,  Boon-Tiong Neo ,  Han-Chuan Fang

IPC: H01L27/146 ,  H01L21/306 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L27/14689 ,  H01L21/02065 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/1463

Abstract: The present invention provides a method for fabricating a CMOS image sensor including a plurality of steps. Firstly, a substrate is provided. Then, a pixel region covering most of the substrate and a logic circuit region on a periphery of the substrate are formed. After that, at least one trench is formed in the pixel region. Next, a deposition process is performed to fill the at least one trench and cover the pixel region. Then, a planarization process is performed to expose a surface of the pixel region. A first treatment on the exposed surface of the pixel region is next performed by applying a first cleaning solution including hydrogen fluoride (HF) and ethylene glycol (EG). Besides, an amount of HF is lesser than that of EG.

Abstract translation: 本发明提供一种制造包括多个步骤的CMOS图像传感器的方法。 首先，提供基板。 然后，形成覆盖基板的大部分的像素区域和基板的周围的逻辑电路区域。 之后，在像素区域中形成至少一个沟槽。 接下来，执行沉积处理以填充至少一个沟槽并覆盖像素区域。 然后，进行平坦化处理以使像素区域的表面露出。 接下来，通过施加包含氟化氢（HF）和乙二醇（EG）的第一清洗溶液来对像素区域的暴露表面进行第一处理。 此外，HF的量少于EG的量。