公开(公告)号：US20160020246A1

公开(公告)日：2016-01-21

申请号：US14332346

申请日：2014-07-15

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Shou-Guo WANG ,  Boon-Tiong Neo ,  Han-Chuan Fang

IPC: H01L27/146 ,  H01L21/306 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L27/14689 ,  H01L21/02065 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/1463

Abstract: The present invention provides a method for fabricating a CMOS image sensor including a plurality of steps. Firstly, a substrate is provided. Then, a pixel region covering most of the substrate and a logic circuit region on a periphery of the substrate are formed. After that, at least one trench is formed in the pixel region. Next, a deposition process is performed to fill the at least one trench and cover the pixel region. Then, a planarization process is performed to expose a surface of the pixel region. A first treatment on the exposed surface of the pixel region is next performed by applying a first cleaning solution including hydrogen fluoride (HF) and ethylene glycol (EG). Besides, an amount of HF is lesser than that of EG.

Abstract translation: 本发明提供一种制造包括多个步骤的CMOS图像传感器的方法。 首先，提供基板。 然后，形成覆盖基板的大部分的像素区域和基板的周围的逻辑电路区域。 之后，在像素区域中形成至少一个沟槽。 接下来，执行沉积处理以填充至少一个沟槽并覆盖像素区域。 然后，进行平坦化处理以使像素区域的表面露出。 接下来，通过施加包含氟化氢（HF）和乙二醇（EG）的第一清洗溶液来对像素区域的暴露表面进行第一处理。 此外，HF的量少于EG的量。

公开(公告)号：US08716104B1

公开(公告)日：2014-05-06

申请号：US13721021

申请日：2012-12-20

Applicant: United Microelectronics Corporation

Inventor： Jian-Jun Zhang ,  Han-Chuan Fang ,  Xiao-Wei Shu ,  Jian-Dong Zhang ,  Yan-Jun Liu ,  Miao Zhang

IPC: H01L21/76

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02315

Abstract: A method of fabricating an isolation structure of a semiconductor device includes the following steps. Firstly, a substrate including a first surface and a second surface is provided. At least one trench is formed in the first surface of the substrate. The trench has a sidewall and a bottom surface. Then, a first chemical vapor deposition process is performed to form a first isolation layer on the first surface of the substrate and the sidewall and the bottom surface of the trench. Then, an anisotropic surface treatment process is performed, so that a surface of the first isolation layer has differential surface chemical properties. Afterwards, a second chemical vapor deposition process is performed to form a second isolation layer on the first isolation layer with a surface having differential surface chemical properties.

Abstract translation: 制造半导体器件的隔离结构的方法包括以下步骤。 首先，提供包括第一表面和第二表面的基板。 在基板的第一表面中形成至少一个沟槽。 沟槽具有侧壁和底面。 然后，进行第一化学气相沉积工艺以在衬底的第一表面和沟槽的侧壁和底表面上形成第一隔离层。 然后，进行各向异性表面处理工艺，使得第一隔离层的表面具有差的表面化学性质。 之后，进行第二化学气相沉积工艺以在第一隔离层上形成具有不同表面化学性质的表面的第二隔离层。