公开(公告)号：US12027190B1

公开(公告)日：2024-07-02

申请号：US17512964

申请日：2021-10-28

申请人： Seagate Technology LLC

发明人： Xiaoyue Huang

IPC分类号： G11B5/40 ,  C23C14/02 ,  G11B5/255 ,  G11B5/31 ,  G11B5/73 ,  H01L21/02 ,  H01L21/285 ,  G11B5/00

CPC分类号： G11B5/7375 ,  C23C14/021 ,  G11B5/255 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/40 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/0228 ,  H01L21/28562 ,  G11B2005/0021 ,  G11B2209/02 ,  G11B2220/2516 ,  Y10T428/1164 ,  Y10T428/1193

摘要： A first layer that includes a metal seed layer, a refractive seed or a refractive dopant is formed on a dielectric substrate. A peg of a near-field transducer is formed on the first layer such that a first surface of the peg is formed on and is in contact with the metal seed. An adhesive layer is formed over the peg using atomic layer deposition. The adhesive layer includes alumina and is 4 nm or less in thickness. A silicon dioxide overcoat is deposited over the adhesive layer. The alumina bonds the silicon dioxide to the peg.

公开(公告)号：US20240117270A1

公开(公告)日：2024-04-11

申请号：US18544841

申请日：2023-12-19

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Zachary L. Schaefer ,  Eric Turner ,  Carl Ballesteros

IPC分类号： C11D1/66 ,  C11D1/00 ,  C11D3/20 ,  H01L21/02

CPC分类号： C11D2111/22 ,  C11D1/008 ,  C11D1/662 ,  C11D3/2075 ,  H01L21/02065 ,  H01L21/02074

摘要： The present disclosure relates to cleaning compositions that are used to clean semiconductor substrates. These cleaning compositions can remove the defects/contaminants arising from previous processing on the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one pH adjusting agent and at least one biosurfactant.

公开(公告)号：US11884900B2

公开(公告)日：2024-01-30

申请号：US17411429

申请日：2021-08-25

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Zachary L. Schaefer ,  Eric Turner ,  Carl Ballesteros

IPC分类号： C11D1/66 ,  C11D11/00 ,  H01L21/02 ,  C11D3/20 ,  C11D1/00

CPC分类号： C11D11/0047 ,  C11D1/008 ,  C11D1/662 ,  C11D3/2075 ,  H01L21/02065 ,  H01L21/02074

摘要： The present disclosure relates to cleaning compositions that are used to clean semiconductor substrates. These cleaning compositions can remove the defects/contaminants arising from previous processing on the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one pH adjusting agent and at least one biosurfactant.

公开(公告)号：US20180323058A1

公开(公告)日：2018-11-08

申请号：US15590004

申请日：2017-05-08

申请人： UNITED MICROELECTRONICS CORP.

发明人： Yi-Liang Ye ,  Kuang-Hsiu Chen ,  Chun-Wei Yu ,  Yu-Ren Wang

IPC分类号： H01L21/02 ,  C09G1/02 ,  C08K5/42 ,  C08K5/14

CPC分类号： H01L21/02074 ,  H01L21/02065 ,  H01L21/32115 ,  H01L29/00

摘要： A method for post chemical mechanical polishing clean is provided in the present invention, which include the steps of providing a substrate, performing a chemical mechanical polishing process, and performing a plurality of cleaning processes sequentially substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) with different ratios and at different temperatures.

公开(公告)号：US09956594B2

公开(公告)日：2018-05-01

申请号：US14978693

申请日：2015-12-22

申请人： SCREEN Holdings Co., Ltd.

发明人： Atsuyasu Miura ,  Naoki Sawazaki

IPC分类号： B08B3/02 ,  B08B3/10 ,  B08B3/08 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/67028 ,  H01L21/02065 ,  H01L21/67051

摘要： A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step wherein liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, are discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.

公开(公告)号：US09896604B2

公开(公告)日：2018-02-20

申请号：US14206947

申请日：2014-03-12

申请人： Ecolab USA Inc.

发明人： Kim Marie Long ,  Michael A. Kamrath ,  Sean McCue

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/768 ,  C09G1/04 ,  B24B37/04 ,  B24B7/22 ,  B81C1/00

CPC分类号： C09G1/02 ,  B24B7/228 ,  B24B37/044 ,  B81C1/00611 ,  B81C2201/0118 ,  C09G1/04 ,  H01L21/02065 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/7684

摘要： Described herein are compositions, kits and methods for polishing sapphire surfaces using compositions having colloidal aluminosilicate particles in an aqueous acidic solution. In some aspects, the methods for polishing a sapphire surface may include abrading a sapphire surface with a rotating polishing pad and a polishing composition. The polishing composition may include an amount of a colloidal aluminosilicate and may have a pH of about 2.0 to about 7.0.

公开(公告)号：US20170092481A1

公开(公告)日：2017-03-30

申请号：US14870946

申请日：2015-09-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC分类号： H01L21/02 ,  B08B1/04 ,  H01L21/67 ,  H01L21/306 ,  H01L21/687 ,  B08B1/00 ,  B08B3/04

CPC分类号： H01L21/02043 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67092 ,  H01L21/687

摘要： A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US20160293434A1

公开(公告)日：2016-10-06

申请号：US15069728

申请日：2016-03-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Jennifer M. Hydrick ,  James Fiorenza

IPC分类号： H01L21/306 ,  H01L21/3105 ,  H01L21/02

CPC分类号： H01L21/30625 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02065 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/31055

摘要： A device includes a crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by using a planarization process configured with a selectivity of the crystalline material to the insulator greater than one. In a preferred embodiment, the planarization process uses a composition including abrasive spherical silica, H2O2 and water. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique.

公开(公告)号：US20160237385A1

公开(公告)日：2016-08-18

申请号：US15137552

申请日：2016-04-25

申请人： ADVANCED TECHNOLOGY MATERIALS, INC.

发明人： Jeffrey A. BARNES ,  Jun LIU ,  Peng ZHANG

IPC分类号： C11D11/00 ,  C11D3/20 ,  B08B7/04 ,  H01L21/02 ,  B08B3/08 ,  B08B3/10 ,  C11D3/04 ,  C11D3/33

CPC分类号： C11D11/0047 ,  B08B3/08 ,  B08B3/10 ,  B08B7/04 ,  C11D3/044 ,  C11D3/2041 ,  C11D3/2044 ,  C11D3/2065 ,  C11D3/2075 ,  C11D3/2086 ,  C11D3/2096 ,  C11D3/33 ,  C11D3/43 ,  C11D7/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3245 ,  C11D7/50 ,  C11D7/5004 ,  C11D7/5022 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/02068 ,  H01L21/02074

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

摘要翻译： 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物基本上不含胺和铵的化合物，例如季铵碱。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

公开(公告)号：US20160099179A1

公开(公告)日：2016-04-07

申请号：US14506009

申请日：2014-10-03

申请人： United Microelectronics Corp.

发明人： Chun-Tsen Lu ,  Chih-Jung Su ,  Jian-Wei Chen ,  Shui-Yen Lu ,  Yi-Wen Chen ,  Po-Cheng Huang ,  Chen-Ming Huang ,  Shih-Fang Tzou

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L21/311 ,  H01L21/02 ,  H01L29/06 ,  H01L21/3105

CPC分类号： H01L29/66545 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/02271 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/4966 ,  H01L29/517

摘要： A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.

摘要翻译： 公开了一种形成半导体器件的方法。 提供具有多个翅片的基板。 绝缘层填充两个相邻翅片之间的间隙的下部。 在一个翅片上形成至少一个第一堆叠结构，并且在一个绝缘层上形成至少一个第二堆叠结构。 形成第一电介质层以覆盖第一和第二堆叠结构。 去除第一电介质层的一部分和第一和第二堆叠结构的部分。 去除第一电介质层的另一部分，直到剩余的第一电介质层的顶部低于第一和第二堆叠结构的顶部。 形成第二电介质层以覆盖第一和第二堆叠结构。 去除第二电介质层的一部分直到第一和第二堆叠结构的顶部露出。