公开(公告)号：US20140327093A1

公开(公告)日：2014-11-06

申请号：US13875289

申请日：2013-05-02

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Kun-Yuan LO ,  Chih-Wei YANG ,  Cheng-Guo CHEN ,  Rai-Min HUANG ,  Jian-Cun KE

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/42376 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/324 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833

Abstract: A field-effect transistor comprises a substrate, a gate dielectric layer, a barrier layer, a metal gate electrode and a source/drain structure. The gate dielectric layer is disposed on the substrate. The barrier layer having a titanium-rich surface is disposed on the gate dielectric layer. The metal gate electrode is disposed on the titanium-diffused surface. The source/drain structure is formed in the substrate and adjacent to the metal gate electrode.

Abstract translation: 场效应晶体管包括衬底，栅极电介质层，势垒层，金属栅极电极和源极/漏极结构。 栅介电层设置在基板上。 具有富钛表面的阻挡层设置在栅极电介质层上。 金属栅电极设置在钛扩散表面上。 源极/漏极结构形成在衬底中并且与金属栅电极相邻。

公开(公告)号：US20160027885A1

公开(公告)日：2016-01-28

申请号：US14873194

申请日：2015-10-02

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Kun-Yuan LO ,  Chih-Wei YANG ,  Cheng-Guo CHEN ,  Rai-Min HUANG ,  Jian-Cun KE

IPC: H01L29/423 ,  H01L21/324 ,  H01L21/265 ,  H01L29/66

CPC classification number: H01L29/42376 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/324 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833

Abstract: A method for fabricating a field-effect transistor is provided. The method includes: forming a gate dielectric layer and a barrier layer on a substrate in sequence; forming a first silicon layer on and in contact with the barrier layer; performing a thermal treatment to form a silicide layer between the barrier layer and the first silicon layer; and forming a second silicon layer on and in contact with the first silicon layer.

Abstract translation: 提供了一种用于制造场效应晶体管的方法。 该方法包括：依次在基板上形成栅介质层和阻挡层; 在所述阻挡层上形成第一硅层并与所述阻挡层接触; 进行热处理以在所述阻挡层和所述第一硅层之间形成硅化物层; 以及在所述第一硅层上并与其接触形成第二硅层。