公开(公告)号：US11372324B2

公开(公告)日：2022-06-28

申请号：US16272889

申请日：2019-02-11

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chia-Chen Sun ,  Yu-Cheng Tung ,  Sheng-Yuan Hsueh ,  Fan Wei Lin

IPC: G03F1/36 ,  G03F1/38 ,  G03F1/84 ,  G03F7/20

Abstract: A method for correcting a mask pattern includes: providing an original mask pattern including at least one dense pattern area and at least one isolated pattern area, and the original mask pattern being divided into a first pattern and a second pattern, wherein the first pattern is formed in the isolated pattern area and extends to the dense pattern area, and the second pattern is formed in the dense pattern area; forming at least one slot on at least one section of the first pattern, and the at least one section of the first pattern is located on at least one transition area between the at least one isolated pattern area and the at least one dense pattern area; and performing an optical proximity correction operation on the first pattern formed with at least one slot and the second pattern. Using the corrected mask pattern may avoid the occurrence of necking or breaking on portion of the post-transfer pattern.