公开(公告)号：US09780218B1

公开(公告)日：2017-10-03

申请号：US15144204

申请日：2016-05-02

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Sheng-Hsu Liu ,  Jhen-cyuan Li ,  Chih-Chung Chen ,  Man-Ling Lu ,  Chung-Min Tsai ,  Yi-wei Chen

IPC: H01L31/072 ,  H01L31/109 ,  H01L29/78 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L29/7851 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  Y02E10/50

Abstract: A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.