公开(公告)号：US08809163B2

公开(公告)日：2014-08-19

申请号：US14095988

申请日：2013-12-03

Applicant: United Microelectronics Corporation

Inventor： Kuan-Ling Liu ,  Shih-Yuan Ueng

IPC: H01L21/76 ,  H01L21/20 ,  H01L29/66 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L29/66666 ,  H01L21/823885 ,  H01L27/0922 ,  H01L29/4236 ,  H01L29/6634 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/7835 ,  H01L2924/00 ,  H01L2924/10253

Abstract: A fabricating method of a trench-gate metal oxide semiconductor device is provided. The fabricating method includes the steps of defining a first zone and a second zone in a substrate, forming at least one first trench in the second zone, forming a dielectric layer on the first zone and the second zone, filling the dielectric layer in the first trench, performing an etching process to form at least one second trench in the first zone by using the dielectric layer as an etching mask, forming a first gate dielectric layer on a sidewall of the second trench, and filling a conducting material layer into the second trench, thereby forming a first gate electrode.

Abstract translation: 提供了一种沟槽栅极金属氧化物半导体器件的制造方法。 制造方法包括以下步骤：在衬底中限定第一区域和第二区域，在第二区域中形成至少一个第一沟槽，在第一区域和第二区域上形成介电层，在第一区域和第二区域中填充介电层 沟槽，通过使用介电层作为蚀刻掩模，在第一区域中形成至少一个第二沟槽，在第二沟槽的侧壁上形成第一栅介质层，并将导电材料层填充到第二沟槽中， 从而形成第一栅电极。

公开(公告)号：US20140094013A1

公开(公告)日：2014-04-03

申请号：US14095988

申请日：2013-12-03

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Kuan-Ling LIU ,  Shih-Yuan Ueng

IPC: H01L29/66

CPC classification number: H01L29/66666 ,  H01L21/823885 ,  H01L27/0922 ,  H01L29/4236 ,  H01L29/6634 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/7835 ,  H01L2924/00 ,  H01L2924/10253

Abstract: A fabricating method of a trench-gate metal oxide semiconductor device is provided. The fabricating method includes the steps of defining a first zone and a second zone in a substrate, forming at least one first trench in the second zone, forming a dielectric layer on the first zone and the second zone, filling the dielectric layer in the first trench, performing an etching process to form at least one second trench in the first zone by using the dielectric layer as an etching mask, forming a first gate dielectric layer on a sidewall of the second trench, and filling a conducting material layer into the second trench, thereby forming a first gate electrode.

Abstract translation: 提供了一种沟槽栅极金属氧化物半导体器件的制造方法。 制造方法包括以下步骤：在衬底中限定第一区域和第二区域，在第二区域中形成至少一个第一沟槽，在第一区域和第二区域上形成介电层，在第一区域和第二区域中填充介电层 沟槽，通过使用介电层作为蚀刻掩模，在第一区域中形成至少一个第二沟槽，在第二沟槽的侧壁上形成第一栅介质层，并将导电材料层填充到第二沟槽中， 从而形成第一栅电极。