公开(公告)号：US20160260769A1

公开(公告)日：2016-09-08

申请号：US15153702

申请日：2016-05-12

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： TSENG-FEI WEN

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14698 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/18

Abstract: A fabricating method of a back-illuminated image sensor includes the following steps. First, a silicon wafer having a first surface and a second surface is provided, wherein a number of trench isolations are formed in the first surface, and at least one image sensing member is formed between the trench isolations. Then, a first chemical mechanical polishing (CMP) process is performed to the second surface using the trench isolations as a polishing stop layer to thin the silicon wafer. Because the polishing rate of the silicon material in the silicon wafer is different with that of the isolation material of the trench isolations in the first CMP process, at least one dishing depression is formed in the second surface of the silicon wafer. Finally, a microlens is formed above the dishing depression, and a surface of the microlens facing the dishing depression is a curved surface.

Abstract translation: 背照式图像传感器的制造方法包括以下步骤。 首先，提供具有第一表面和第二表面的硅晶片，其中在第一表面中形成多个沟槽隔离，并且在沟槽隔离件之间形成至少一个图像感测构件。 然后，使用沟槽隔离作为抛光停止层对第二表面进行第一化学机械抛光（CMP）处理以使硅晶片变薄。 由于硅晶片中的硅材料的抛光速率与第一CMP工艺中的沟槽隔离物的隔离材料的抛光速率不同，所以在硅晶片的第二表面中形成至少一个凹陷凹陷。 最后，在凹陷凹陷之上形成微透镜，并且面对凹陷凹陷的微透镜的表面是曲面。