公开(公告)号：US09111850B2

公开(公告)日：2015-08-18

申请号：US14670440

申请日：2015-03-27

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chung-Sung Jang ,  Ming-Tse Lin ,  Yung-Chang Lin

IPC: G03F7/20 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L22/20 ,  G03F7/20 ,  G03F7/707 ,  G03F7/70783 ,  H01L21/6836 ,  H01L21/6838 ,  H01L22/12 ,  Y10T29/49764 ,  Y10T279/11

Abstract: A semiconductor process is described in this application. The process includes the following steps: providing a semiconductor substrate; measuring a warpage level of the semiconductor substrate; and holding the semiconductor substrate by providing at least one vacuum suction according to the warpage level, so that the semiconductor substrate is subjected to a plurality of varied suction intensities. The semiconductor substrate is held on a chuck having a plurality of holes grouped into a plurality of groups, and the sizes of the holes within different groups are different, wherein the sizes of the holes increase from a center toward an edge of the chuck, and the holes are arranged in a spiral.

Abstract translation: 在本申请中描述了半导体工艺。 该方法包括以下步骤：提供半导体衬底; 测量半导体衬底的翘曲程度; 并且通过根据翘曲水平提供至少一个真空吸力来保持半导体衬底，使得半导体衬底经受多个变化的吸入强度。 半导体基板被保持在具有分组为多组的多个孔的卡盘上，并且不同组内的孔的尺寸不同，其中孔的尺寸从卡盘的中心向边缘增加，并且 孔以螺旋状排列。