公开(公告)号：US20190199066A1

公开(公告)日：2019-06-27

申请号：US16136713

申请日：2018-09-20

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： ARKADIY LYAKH ,  MATTHEW SUTTINGER

IPC: H01S5/34 ,  H01S5/026

CPC classification number: H01S5/3402 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wavefunctions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.

公开(公告)号：US20190115727A1

公开(公告)日：2019-04-18

申请号：US16029947

申请日：2018-07-09

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： ARKADIY LYAKH ,  MATTHEW SUTTINGER

IPC: H01S5/34 ,  H01S5/22 ,  H01S5/343 ,  H01S5/022

Abstract: A QCL may include a substrate, and a semiconductor layer adjacent the substrate and defining an active region. The active region may have an elongate shape extending laterally across the substrate and having a number of stages greater than 25, each stage having a thickness less than 40 nanometers. The active region may have a ridge width greater than 15 μm.

公开(公告)号：US20230163571A1

公开(公告)日：2023-05-25

申请号：US17938817

申请日：2022-10-07

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： ARKADIY LYAKH ,  MATTHEW SUTTINGER

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/20

CPC classification number: H01S5/3402 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.