公开(公告)号：US20190186015A1

公开(公告)日：2019-06-20

申请号：US16283809

申请日：2019-02-24

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Bowan TAO ,  Jie XIONG ,  Fei ZHANG ,  Chaoren LI ,  Xiaohui ZHAO ,  Yanrong LI

IPC: C23C16/46 ,  C23C16/54 ,  C23C16/40 ,  C23C14/56 ,  C23C16/56 ,  C23C14/08 ,  C23C14/24 ,  C23C14/54

CPC classification number: C23C16/46 ,  C23C14/08 ,  C23C14/24 ,  C23C14/541 ,  C23C14/562 ,  C23C16/40 ,  C23C16/545 ,  C23C16/56

Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.

公开(公告)号：US20170191163A1

公开(公告)日：2017-07-06

申请号：US15121045

申请日：2015-04-30

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Bowan TAO ,  Jie XIONG ,  Fei ZHANG ,  Chaoren LI ,  Xiaohui ZHAO ,  Yanrong LI

IPC: C23C16/46 ,  C23C16/56 ,  C23C14/24

CPC classification number: C23C16/46 ,  C23C14/08 ,  C23C14/24 ,  C23C14/541 ,  C23C14/562 ,  C23C16/40 ,  C23C16/545 ,  C23C16/56

Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.