公开(公告)号：US20140000808A1

公开(公告)日：2014-01-02

申请号：US13932724

申请日：2013-07-01

Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. ,  SINMAT, INC.

Inventor： RAJIV SINGH ,  DEEPIKA SINGH ,  ABHUDAYA MISHRA

IPC: H01L21/77

CPC classification number: H01L21/77 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

Abstract: A chemical mechanical polishing (CMP) apparatus includes a process controller operable to execute a multi-step CMP algorithm implementing delivering a first chemical composition onto the wafer surface while on a platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first chemical composition onto the wafer surface for a second time duration. CMP is performed with a polishing pad contacting the wafer surface using a slurry including the first chemical composition during the first time duration or the second chemical composition during the second time duration, and a non-polishing process without any contact of the polishing pad to the wafer surface using the other of the first and second chemical composition during the other of the time durations, and repeating the multi-step CMP comprising process a plurality of times on the wafer.

Abstract translation: 化学机械抛光（CMP）装置包括可操作以执行多步CMP算法的过程控制器，该多步骤CMP算法在第一时间段内在压板上将第一化学成分递送到晶片表面上，并且不从压板移除晶片， 将不同于第一化学成分的第二化学成分输送到晶片表面上持续第二时间。 使用在第一持续时间期间使用包含第一化学成分的浆料或在第二持续时间期间的第二化学成分的抛光垫与抛光垫接触的CMP进行CMP，以及不抛光抛光垫与第二化学成分接触的非抛光工艺 在另一个持续时间期间使用第一和第二化学成分中的另一个的晶片表面，并且重复在晶片上多次处理多步CMP。