公开(公告)号：US09909221B2

公开(公告)日：2018-03-06

申请号：US14205589

申请日：2014-03-12

申请人： UT-Battelle, LLC

发明人： Ji-Won Moon ,  Hyunsung Jung ,  Tommy Joe Phelps ,  Chad E. Duty ,  Ilia N. Ivanov ,  Pooran Chandra Joshi ,  Gerald Earle Jellison, Jr. ,  Beth Louise Armstrong ,  Sean Campbell Smith ,  Adam Justin Rondinone ,  Lonnie J. Love

IPC分类号： C25B1/00 ,  C25B1/21 ,  C01B19/00

CPC分类号： C25B1/00 ,  C01B19/007 ,  C25B1/21

摘要： The invention is directed to a method for producing metal-containing particles, the method comprising subjecting an aqueous solution comprising a metal salt, Eh, lowering reducing agent, pH adjusting agent, and water to conditions that maintain the Eh value of the solution within the bounds of an Eh-pH stability field corresponding to the composition of the metal-containing particles to be produced, and producing said metal-containing particles in said aqueous solution at a selected Eh value within the bounds of said Eh-pH stability field. The invention is also directed to the resulting metal-containing particles as well as devices in which they are incorporated.

公开(公告)号：US09059079B1

公开(公告)日：2015-06-16

申请号：US14036925

申请日：2013-09-25

申请人： UT-Battelle, LLC ,  AppliCote LLC.

发明人： Nathaniel R Quick ,  Pooran C Joshi ,  Chad Edward Duty ,  Gerald Earle Jellison, Jr. ,  Joseph Attilio Angelini

IPC分类号： H01L21/22 ,  H01L21/38 ,  H05K3/44 ,  H01L21/223

CPC分类号： H01L21/223 ,  H01L21/0455 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1812 ,  Y02E10/547

摘要： A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

摘要翻译： 公开了一种用于处理绝缘体材料或半导体材料的方法。 该方法包括将等离子体灯脉冲到材料上以将掺杂物质扩散到材料中，以激活材料中的掺杂物质或金属化材料的大面积区域。 该方法可以进一步包括将激光脉冲到材料的选定区域上以将掺杂物质扩散到材料中，以激活材料中的掺杂物质或金属化材料的选定区域。

公开(公告)号：US20140273147A1

公开(公告)日：2014-09-18

申请号：US14205699

申请日：2014-03-12

申请人： UT-Battelle, LLC

发明人： Pooran Chandra Joshi ,  Chad E. Duty ,  Gerald Earle Jellison, Jr. ,  Ilia N. Ivanov ,  Beth Louise Armstrong ,  Ji-Won Moon ,  Hyunsung Jung ,  Adam Justin Rondinone ,  Tommy Joe Phelps

IPC分类号： C12P3/00

CPC分类号： C12P3/00

摘要： The invention is directed to a method for producing metal oxide particles, the method comprising subjecting non-oxide metal-containing particles to an oxidation step that converts the non-oxide metal-containing particles to said metal oxide particles. The invention is also directed to the resulting metal oxide compositions. In particular embodiments, non-oxide precursor particles are produced by microbial means, and the produced non-oxide precursor particles subjected to oxidation conditions under elevated temperature conditions (e.g., by a thermal pulse) to produce metal oxide particles or a metal oxide film.

摘要翻译： 本发明涉及一种生产金属氧化物颗粒的方法，所述方法包括使非含氧化物金属的颗粒进行氧化步骤，所述氧化步骤将非氧化物金属颗粒转化为所述金属氧化物颗粒。 本发明还涉及所得金属氧化物组合物。 在具体实施方案中，通过微生物手段产生非氧化物前体颗粒，并且所产生的非氧化物前体颗粒在高温条件下（例如通过热脉冲）进行氧化条件以产生金属氧化物颗粒或金属氧化物膜。