公开(公告)号：US11038080B2

公开(公告)日：2021-06-15

申请号：US15422218

申请日：2017-02-01

申请人： UTICA LEASECO, LLC

发明人： Yan Zhu ,  Sean Sweetnam ,  Brendan M. Kayes ,  Melissa J. Archer ,  Gang He

IPC分类号： H01L33/00 ,  H01L31/0216 ,  H01L33/22 ,  H01L33/30 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L31/18 ,  H01L31/056 ,  H01L31/0236

摘要： An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.

公开(公告)号：US11942566B2

公开(公告)日：2024-03-26

申请号：US17347314

申请日：2021-06-14

申请人： Utica Leaseco, LLC

发明人： Yan Zhu ,  Sean Sweetnam ,  Brendan M. Kayes ,  Melissa J. Archer ,  Gang He

IPC分类号： H01L33/00 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/056 ,  H01L31/18 ,  H01L33/22 ,  H01L33/30 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46

CPC分类号： H01L33/0093 ,  H01L31/02168 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/1892 ,  H01L33/0062 ,  H01L33/22 ,  H01L33/30 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0091 ,  Y02E10/52

摘要： A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.