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公开(公告)号：US12021164B2
公开(公告)日：2024-06-25
申请号：US17459611
申请日：2021-08-27
申请人： Utica Leaseco, LLC
IPC分类号： H01L31/0216 , H01L31/0304 , H01L31/054 , H01L31/056 , H01L31/0687 , H01L31/0725 , H01L31/0735 , H01L31/18
CPC分类号： H01L31/1844 , H01L31/02168 , H01L31/03046 , H01L31/0547 , H01L31/056 , H01L31/0687 , H01L31/0725 , H01L31/0735
摘要： A method is described that includes sputtering multiple layers on a back surface of the photovoltaic structure, the photovoltaic structure being made of at least one group III-V semiconductor material, and evaporating, over the multiple layers, one or more additional layers including a metal layer, the back metal structure being formed by the multiple layers and the additional layers. A photovoltaic device is also described that includes a back metal structure disposed over a back surface of a photovoltaic structure made of a group III-V semiconductor material, the back metal structure including one or more evaporated layers disposed over multiple sputtered layers, the one or more evaporated layers including a metal layer. By allowing evaporation along with sputtering, tool size and costs can be reduced, including minimizing a number of vacuum breaks. Moreover, good yield and reliability, such as reducing dark line defects (DLDs), can also be achieved.
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公开(公告)号：US20210305452A1
公开(公告)日：2021-09-30
申请号：US17347314
申请日：2021-06-14
申请人： Utica Leaseco, LLC
发明人： Yan ZHU , Sean SWEETNAM , Brendan M. KAYES , Melissa J. ARCHER , Gang HE
IPC分类号： H01L33/00 , H01L31/0216 , H01L33/22 , H01L33/30 , H01L33/42 , H01L33/44 , H01L33/46 , H01L31/18 , H01L31/056 , H01L31/0236
摘要： A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.
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公开(公告)号：US11107939B2
公开(公告)日：2021-08-31
申请号：US16257569
申请日：2019-01-25
申请人： UTICA LEASECO, LLC
IPC分类号： H02N6/00 , H01L31/042 , H01L31/048 , H01L31/05 , H01L31/18 , C09J7/38 , C09J7/29 , B32B7/12
摘要： This disclosure describes various structures, devices, and arrangements that replace a PSA used to hold shingled cells together with an adhesive film. For example, in an aspect, the present disclosure is directed to a shingled arrangement of photovoltaic (PV) cells. In some aspects, the shingled arrangement of PV cells may include a first PV cell, a second PV cell, and an adhesive film placed between a backside the first PV cell and a front side of the second PV cell. The adhesive film may be thermally bonded to the first PV cell and to the second PV cell after the application of localized heat and pressure and holds the first PV cell and the second PV cell together. Additionally, a bus bar of the second PV cell may be electrically connected to the first PV cell by a conductive via formed through the adhesive film.
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公开(公告)号：US20210260525A1
公开(公告)日：2021-08-26
申请号：US17256577
申请日：2018-06-29
申请人： Gang HE , Lori WASHINGTON , Liqiang YAO , Jianhui NAN , Xinyun ZHANG , UTICA LEASECO, LLC , DONGTAI HI-TECH EQUIPMENT TECHNOLOGY CO., LTD.
发明人： Gang HE , Lori WASHINGTON , Liqiang YAO , Jianhui NAN , Xinyun ZHANG
摘要： The disclosure describes various aspects of a metal organic chemical vapor deposition (MOCVD) effluent abatement process. In an aspect, a system for removing toxic waste from an exhaust stream includes a first cold trap that operates at a first pressure and condenses toxic materials in the exhaust stream for removal as solid waste; a pump connected to the first cold trap that increases a pressure of the exhaust stream; a hot cracker connected to the pump that decomposes toxic materials remaining in the exhaust stream after the first cold trap; a second cold trap connected to the hot cracker that operates at a second pressure higher than the first pressure and condenses the decomposed toxic materials remaining in the exhaust stream for removal as solid waste; and a scrubber connected to the second cold trap that absorbs toxic materials remaining in the exhaust stream after the second cold trap.
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公开(公告)号：US11038080B2
公开(公告)日：2021-06-15
申请号：US15422218
申请日：2017-02-01
申请人： UTICA LEASECO, LLC
发明人： Yan Zhu , Sean Sweetnam , Brendan M. Kayes , Melissa J. Archer , Gang He
IPC分类号： H01L33/00 , H01L31/0216 , H01L33/22 , H01L33/30 , H01L33/42 , H01L33/44 , H01L33/46 , H01L31/18 , H01L31/056 , H01L31/0236
摘要： An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.
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公开(公告)号：US20220099593A1
公开(公告)日：2022-03-31
申请号：US17484924
申请日：2021-09-24
申请人： Utica Leaseco, LLC
摘要： Aspects of the present disclosure include methods, apparatuses, and computer readable media for transmitting a light such that is incident on a semiconductor device, detecting a first reflected light from a first layer of the semiconductor device and a second reflected light from a second layer of the semiconductor device, identifying a defect in the first layer based on the first reflected light and the second reflected light, wherein the defect provides a shunt path between a top electrode to be deposited on the first layer and the second layer, and performing a defect reduction procedure on the semiconductor device to compensate for the defect in response to identifying the defect.
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公开(公告)号：US20220085219A1
公开(公告)日：2022-03-17
申请号：US17474884
申请日：2021-09-14
申请人： Utica Leaseco, LLC
发明人： James G. NEFF , Paul E. SIMS
摘要： A photovoltaic device may include a flexible diode circuit having one or more bypass diodes mounted to one or more semiconductor layers using surface mount technology (SMT). The bypass diode and the one or more of the semiconductor layers may allow the flexible diode circuit to be manufactured as a thin, flexible ribbon, thereby providing efficiency in manufacturing and storing of the flexible diode circuit and/or the photovoltaic device, and also increasing a packing factor and areal power of the photovoltaic device, as compared to a typical photovoltaic device.
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公开(公告)号：US20220080835A1
公开(公告)日：2022-03-17
申请号：US17476023
申请日：2021-09-15
申请人： Utica Leaseco, LLC
发明人： James Gordon NEFF , Todd KRAJEWSKI
摘要： Removable solar panels from corresponding body parts (removable or fixed) of a vehicle may allow removal and replacement of the panels without removing and replacing the corresponding body parts. In an example, a removable photovoltaic panel for a vehicle may include an array of photovoltaic devices interconnected and assembled together, the array of photovoltaic devices may have a form factor of a surface of a corresponding body panel of the vehicle. The removable photovoltaic panel may also include an attachment layer configured to attach the array of photovoltaic devices to the surface of the corresponding body panel.
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公开(公告)号：US20220074057A1
公开(公告)日：2022-03-10
申请号：US17472106
申请日：2021-09-10
申请人： Utica Leaseco, LLC
摘要： A system and method for generating gas are disclosed. The system may include one or more current sources to generate an electrical current. The system may also include one or more cathode-anode assemblies electrically coupled with the one or more current sources. The one or more cathode-anode assemblies may generate a gas in response to receiving the electrical current from the one or more current sources. Each of the one or more cathode-anode assemblies may include a first electrode and a second electrode forming a concentric cylindrical structure, wherein the second electrode surrounds the first electrode and forms a gap between the second electrode and the first electrode. The system may also include electrolyte provided in the gap.
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公开(公告)号：US11271133B2
公开(公告)日：2022-03-08
申请号：US15957446
申请日：2018-04-19
申请人： UTICA LEASECO, LLC
发明人： Brendan M. Kayes , Gang He
IPC分类号： H01L31/0687 , H01L31/18 , H01L31/028 , H01L33/00 , H01L33/04 , H01L33/30
摘要： A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure, wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.
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