公开(公告)号：US20240162038A1

公开(公告)日：2024-05-16

申请号：US18167093

申请日：2023-02-10

Applicant: United Microelectronics Corp.

Inventor： Chien Heng Liu ,  Chia-Wei Huang ,  Yung-Feng Cheng ,  Ming-Jui Chen

IPC: H01L21/027 ,  G03F1/76

CPC classification number: H01L21/0271 ,  G03F1/76

Abstract: A photomask structure including a first layout pattern and a second layout pattern is provided. The second layout pattern is located on one side of the first layout pattern. The first layout pattern and the second layout pattern are separated from each other. The first layout pattern has a first edge and a second edge opposite to each other. The second layout pattern has a third edge and a fourth edge opposite to each other. The third edge of the second layout pattern is adjacent to the first edge of the first layout pattern. The second layout pattern includes a first extension portion exceeding an end of the first layout pattern. The first extension portion includes a first protruding portion protruding from the third edge of the second layout pattern. The first protruding portion exceeds the first edge of the first layout pattern.