公开(公告)号：US20240162218A1

公开(公告)日：2024-05-16

申请号：US18164622

申请日：2023-02-06

Applicant: United Microelectronics Corp.

Inventor： Chih Hsiang Chang ,  Mei-Ling Chao ,  Yin-Chia Tsai ,  Tien-Hao Tang ,  Kuan-Cheng Su

IPC: H01L27/02 ,  H01L21/84

CPC classification number: H01L27/0255 ,  H01L21/84 ,  H01L27/0259 ,  H01L27/0266 ,  H01L27/0292 ,  H01L27/0296

Abstract: An electrostatic discharge device including a gate structure, a plurality of first doped regions, and a plurality of second doped regions. The gate structure is disposed on a substrate. The gate structure includes a body part and a plurality of extension parts. The extension parts are connected with the body part, and an extension direction of the body part is different from an extension direction of the extension parts. The first doped regions are located in the substrate between the extension parts. The second doped regions are located in the substrate at two outer sides of the extension parts. The first doped regions and the second doped regions have different conductivity types.