公开(公告)号：US20200006517A1

公开(公告)日：2020-01-02

申请号：US16053665

申请日：2018-08-02

Applicant: United Microelectronics Corp.

Inventor： Yi-Fan Li ,  Po-Ching Su ,  Cheng-Chia Liu ,  Yen-Tsai Yi ,  Wei-Chuan Tsai ,  Chih-Chiang Wu ,  Ti-Bin Chen ,  Ching-Chu Tseng

IPC: H01L29/66 ,  H01L29/78 ,  H01L23/31

Abstract: A structure of semiconductor device includes a gate structure, disposed on a substrate. A spacer is disposed on a sidewall of the gate structure, wherein the spacer is an l-like structure. A first doped region is disposed in the substrate at two sides of the gate structure. A second doped region is disposed in the substrate at the two sides of the gate structure, overlapping the first doped region. A silicide layer is disposed on the substrate within the second doped region, separating from the spacer by a distance. A dielectric layer covers over the second doped region and the gate structure with the spacer.