公开(公告)号：US20230125856A1

公开(公告)日：2023-04-27

申请号：US17533146

申请日：2021-11-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsiang-Wen Ke ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Jin-Yan Chiou

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22

Abstract: A method for fabricating a semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a barrier layer in the trench, forming a nucleation layer on the barrier layer, performing an anneal process to form a silicide layer, forming a bulk layer on the silicide layer, and forming a magnetic tunneling junction (MTJ) on the bulk layer.

公开(公告)号：US20210343931A1

公开(公告)日：2021-11-04

申请号：US16882552

申请日：2020-05-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Hsin-Fu Huang ,  Yen-Tsai Yi ,  Hsiang-Wen Ke

IPC: H01L43/02 ,  H01L43/12 ,  G11C11/16

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.

公开(公告)号：US20190057895A1

公开(公告)日：2019-02-21

申请号：US15711854

申请日：2017-09-21

Applicant: United Microelectronics Corp.

Inventor： Li-Han Chen ,  Chun-Chieh Chiu ,  Wei-Chuan Tsai ,  Yen-Tsai Yi

IPC: H01L21/74 ,  H01L21/768

Abstract: A manufacturing method of an interconnect structure including the following steps is provided. A dielectric layer is formed on a silicon layer, wherein an opening exposing the silicon layer is in the dielectric layer. A metal layer is formed on the surface of the opening. A stress adjustment layer is formed on the metal layer. A thermal process is performed to react the metal layer with the silicon layer to form a metal silicide layer on the silicon layer. The stress adjustment layer is removed after the thermal process is performed. A barrier layer is formed on the surface of the opening.

公开(公告)号：US20170323950A1

公开(公告)日：2017-11-09

申请号：US15656778

申请日：2017-07-21

Applicant: United Microelectronics Corp.

Inventor： Pin-Hong Chen ,  Kuo-Chih Lai ,  Chia-Chang Hsu ,  Chun-Chieh Chiu ,  Li-Han Chen ,  Min-Chuan Tsai ,  Kuo-Chin Hung ,  Wei-Chuan Tsai ,  Hsin-Fu Huang ,  Chi-Mao Hsu

IPC: H01L29/66 ,  H01L29/45 ,  H01L21/285 ,  H01L29/267 ,  H01L29/78

CPC classification number: H01L29/665 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L29/267 ,  H01L29/45 ,  H01L29/7845 ,  H01L29/785

Abstract: A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.

公开(公告)号：US11450564B2

公开(公告)日：2022-09-20

申请号：US16568266

申请日：2019-09-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Li-Han Chen ,  Hsiang-Wen Ke

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/285

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a source/drain region adjacent to two sides of the gate structure; forming an interlayer dielectric (ILD) layer on the gate structure; forming a contact hole in the ILD layer to expose the source/drain region; forming a barrier layer in the contact hole; performing an anneal process; and performing a plasma treatment process to inject nitrogen into the contact hole.

公开(公告)号：US09985110B2

公开(公告)日：2018-05-29

申请号：US15656778

申请日：2017-07-21

Applicant: United Microelectronics Corp.

Inventor： Pin-Hong Chen ,  Kuo-Chih Lai ,  Chia-Chang Hsu ,  Chun-Chieh Chiu ,  Li-Han Chen ,  Min-Chuan Tsai ,  Kuo-Chin Hung ,  Wei-Chuan Tsai ,  Hsin-Fu Huang ,  Chi-Mao Hsu

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/45 ,  H01L29/267 ,  H01L29/78 ,  H01L21/285

CPC classification number: H01L29/665 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L29/267 ,  H01L29/45 ,  H01L29/7845 ,  H01L29/785

Abstract: A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.

公开(公告)号：US20180138125A1

公开(公告)日：2018-05-17

申请号：US15853978

申请日：2017-12-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kun-Ju Li ,  Kuo-Chin Hung ,  Min-Chuan Tsai ,  Wei-Chuan Tsai ,  Yi-Han Liao ,  Chun-Tsen Lu ,  Fu-Shou Tsai ,  Li-Chieh Hsu

IPC: H01L23/528 ,  H01L29/417 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/41758 ,  H01L29/66628 ,  H01L29/7833

Abstract: A layout structure including a conductive structure is provided. The layout structure includes a dielectric layer formed on a substrate and a conductive structure formed in the dielectric layer. And the conductive structure further includes a barrier layer, a metal layer formed within the barrier layer, and a high resistive layer sandwiched in between the barrier layer and the metal layer.

公开(公告)号：US09640482B1

公开(公告)日：2017-05-02

申请号：US15097301

申请日：2016-04-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Pin-Hong Chen ,  Kuo-Chih Lai ,  Min-Chuan Tsai ,  Chun-Chieh Chiu ,  Li-Han Chen ,  Yen-Tsai Yi ,  Wei-Chuan Tsai ,  Kuo-Chin Hung ,  Hsin-Fu Huang ,  Chi-Mao Hsu

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L29/45 ,  H01L23/522

CPC classification number: H01L29/45 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53266

Abstract: The present invention utilizes a barrier layer in the contact hole to react with an S/D region to form a silicide layer. After forming the silicide layer, a directional deposition process is performed to form a first metal layer primarily on the barrier layer at the bottom of the contact hole, so that very little or even no first metal layer is disposed on the barrier layer at the sidewall of the contact hole. Then, the second metal layer is deposited from bottom to top in the contact hole as the deposition rate of the second metal layer on the barrier layer is slower than the deposition rate of the second metal layer on the first metal layer.

公开(公告)号：US20250081568A1

公开(公告)日：2025-03-06

申请号：US18950155

申请日：2024-11-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Hsiang-Wen Ke

IPC: H01L29/45 ,  H01L29/40

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.

公开(公告)号：US20230094638A1

公开(公告)日：2023-03-30

申请号：US17510394

申请日：2021-10-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Hsiang-Wen Ke

IPC: H01L29/45 ,  H01L29/40

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.