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公开(公告)号:US20240393676A1
公开(公告)日:2024-11-28
申请号:US18334382
申请日:2023-06-14
Applicant: United Microelectronics Corp.
Inventor: Ming-Hsien Kuo , Chih-Hsien Tang , Song-Yi Lin
IPC: G03F1/70 , G06F30/398
Abstract: A design method of a photomask structure including the following steps is provided. A layout pattern is provided. The layout pattern includes first to third basic patterns. The second basic pattern is located between the first and third basic patterns and connected to the first and third basic patterns. There is a first jog portion between the first and second basic patterns, there is a second jog portion between the second and third basic patterns, and the first and second jog portions are located at two opposite sides of the layout pattern. The first and second jog portions are moved to align the first and second jog portions with each other and to eliminate the second basic pattern, wherein a first area change amount produced by moving the first jog portion is equal to a second area change amount produced by moving the second jog portion.
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公开(公告)号:US11475202B1
公开(公告)日:2022-10-18
申请号:US17323893
申请日:2021-05-18
Applicant: United Microelectronics Corp.
Inventor: Ming-Hsien Kuo , Chih-Wei Hsu , Song-Yi Lin
IPC: G06F30/30 , G03F1/36 , G03F7/20 , G06F30/398 , G06F30/392 , G06F119/18
Abstract: A method of designing a semiconductor device includes creating a library for test patterns on a frame and an on purpose violation layout on a main chip of a layout, and then creating filter marks according to the library. An OPC (optical proximity correction) is run using the layout, and an OPC verifying is performed for obtaining a pattern with hot spots to determine whether the hot spots are within the frame and the filter marks. When the hot spots are within the frame and the filter marks, a mask can be made. When the hot spots are outside the frame and the filter marks, it is necessary to check whether the hot spots need to be repaired. When the hot spots are within the frame and outside the filter marks, the hot spots are added into the library as data of the on purpose violation layout.
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