Memory, supply voltage generation circuit, and operation method of a supply voltage generation circuit used for a memory array
    1.
    发明授权
    Memory, supply voltage generation circuit, and operation method of a supply voltage generation circuit used for a memory array 有权
    存储器,电源电压生成电路以及用于存储器阵列的电源电压产生电路的操作方法

    公开(公告)号:US08724404B2

    公开(公告)日:2014-05-13

    申请号:US13652422

    申请日:2012-10-15

    Abstract: A supply voltage generation circuit includes a comparison unit, a voltage level control unit and a voltage regulator circuit. The comparison unit is configured to compare input data and output data of a memory array to each other and thereby generating a comparison result, wherein the output data are storage data stored in a plurality of memory units of the memory array processed by a program operation according to the input data, and the comparison result indicates the number of different bits existing between the output data and the input data. The voltage level control unit is configured to generate a control signal according to the comparison result. The voltage regulator circuit is configured to provide a supply voltage for the memory array and adjust the value of the supply voltage according to the control signal. A memory and an operation method of a supply generation circuit used for a memory array are also provided.

    Abstract translation: 电源电压产生电路包括比较单元,电压电平控制单元和电压调节器电路。 比较单元被配置为将存储器阵列的输入数据和输出数据彼此进行比较,从而生成比较结果,其中输出数据是存储在由程序操作处理的存储器阵列的多个存储器单元中的存储数据, 并且比较结果表示存在于输出数据和输入数据之间的不同位的数量。 电压电平控制单元被配置为根据比较结果产生控制信号。 电压调节器电路被配置为为存储器阵列提供电源电压,并根据控制信号调节电源电压的值。 还提供了用于存储器阵列的供应生成电路的存储器和操作方法。

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