公开(公告)号：US20130119479A1

公开(公告)日：2013-05-16

申请号：US13736951

申请日：2013-01-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Han Hung ,  Tsai-Fu Chen ,  Shyh-Fann Ting ,  Cheng-Tung Huang ,  Kun-Hsien Lee ,  Ta-Kang Lo ,  Tzyy-Ming Cheng

IPC: H01L27/092

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7848

Abstract: A transistor structure is provided in the present invention. The transistor structure includes: a substrate comprising a N-type well, a gate disposed on the N-type well, a spacer disposed on the gate, a first lightly doped region in the substrate below the spacer, a P-type source/drain region disposed in the substrate at two sides of the gate, a silicon cap layer covering the P-type source/drain region and the first lightly doped region and a silicide layer disposed on the silicon cap layer, and covering only a portion of the silicon cap layer.

Abstract translation: 在本发明中提供一种晶体管结构。 晶体管结构包括：包括N型阱的衬底，设置在N型阱上的栅极，设置在栅极上的间隔物，位于衬垫下方的衬底中的第一轻掺杂区域，P型源极/漏极 位于栅极两侧的衬底中的覆盖P型源/漏区和第一轻掺杂区的硅帽层和设置在硅帽层上的硅化物层，并且仅覆盖硅的一部分 盖层。

公开(公告)号：US08823109B2

公开(公告)日：2014-09-02

申请号：US13736951

申请日：2013-01-09

Applicant: United Microelectronics Corp.

Inventor： Wen-Han Hung ,  Tsai-Fu Chen ,  Shyh-Fann Ting ,  Cheng-Tung Huang ,  Kun-Hsien Lee ,  Ta-Kang Lo ,  Tzyy-Ming Cheng

IPC: H01L29/76 ,  H01L29/94 ,  H01L27/092

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7848

Abstract: A transistor structure is provided in the present invention. The transistor structure includes: a substrate comprising a N-type well, a gate disposed on the N-type well, a spacer disposed on the gate, a first lightly doped region in the substrate below the spacer, a P-type source/drain region disposed in the substrate at two sides of the gate, a silicon cap layer covering the P-type source/drain region and the first lightly doped region and a silicide layer disposed on the silicon cap layer, and covering only a portion of the silicon cap layer.

Abstract translation: 在本发明中提供一种晶体管结构。 晶体管结构包括：包括N型阱的衬底，设置在N型阱上的栅极，设置在栅极上的间隔物，位于衬垫下方的衬底中的第一轻掺杂区域，P型源极/漏极 位于栅极两侧的衬底中的覆盖P型源/漏区和第一轻掺杂区的硅帽层和设置在硅帽层上的硅化物层，并且仅覆盖硅的一部分 盖层。