公开(公告)号：US20230129579A1

公开(公告)日：2023-04-27

申请号：US17528159

申请日：2021-11-16

Applicant: United Microelectronics Corp.

Inventor： Hao-Ming Lee ,  Ta Kang Lo ,  Tsai-Fu Chen ,  Shou-Wei Hsieh

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

Abstract: A high electron mobility transistor (HEMT) device including a substrate, a channel layer, a barrier layer, a p-type gallium nitride (GaN) spacer, a gate electrode, a source electrode, and a drain electrode is provided. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer and has a protruding portion. The P-type GaN spacer is disposed on a side wall of the protruding portion. The gate electrode is disposed on the protruding portion and the P-type GaN spacer. The source electrode and the drain electrode are disposed on two sides of the gate electrode.

公开(公告)号：US12100756B2

公开(公告)日：2024-09-24

申请号：US17528159

申请日：2021-11-16

Applicant: United Microelectronics Corp.

Inventor： Hao-Ming Lee ,  Ta Kang Lo ,  Tsai-Fu Chen ,  Shou-Wei Hsieh

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/0607 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/13064

Abstract: A high electron mobility transistor (HEMT) device including a substrate, a channel layer, a barrier layer, a p-type gallium nitride (GaN) spacer, a gate electrode, a source electrode, and a drain electrode is provided. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer and has a protruding portion. The P-type GaN spacer is disposed on a side wall of the protruding portion. The gate electrode is disposed on the protruding portion and the P-type GaN spacer. The source electrode and the drain electrode are disposed on two sides of the gate electrode.