公开(公告)号：US20130316540A1

公开(公告)日：2013-11-28

申请号：US13966276

申请日：2013-08-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Chu Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Keng-Jen Liu

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/02063

Abstract: A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract translation: 描述了一种去除氧化物的方法。 提供了一种衬底，包括其中形成有自然氧化物层的暴露部分。 使用三氟化氮（NF3）和氨（NH3）作为反应气体对基板进行去除氧化处理，其中NF 3的体积流量大于NH 3的体积流量。

公开(公告)号：US08969209B2

公开(公告)日：2015-03-03

申请号：US13966276

申请日：2013-08-13

Applicant: United Microelectronics Corp.

Inventor： Yen-Chu Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Keng-Jen Liu

IPC: H01L21/302 ,  C23F1/00 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/02063

Abstract: A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract translation: 描述了一种去除氧化物的方法。 提供了一种衬底，包括其中形成有自然氧化物层的暴露部分。 使用三氟化氮（NF3）和氨（NH3）作为反应气体对基板进行去除氧化处理，其中NF 3的体积流量大于NH 3的体积流量。