公开(公告)号：US11764174B2

公开(公告)日：2023-09-19

申请号：US17534419

申请日：2021-11-23

Applicant: United Microelectronics Corp.

Inventor： Chun-Chi Huang ,  Hui-Lung Chou ,  Chuang-Han Hsieh ,  Yung-Feng Lin ,  Shin-Chi Chen

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L24/02 ,  H01L23/528 ,  H01L24/05 ,  H01L23/53295 ,  H01L2224/0219 ,  H01L2224/02181 ,  H01L2224/02185 ,  H01L2224/05557

Abstract: A semiconductor structure including a substrate, a dielectric layer, a first conductive layer, and a passivation layer is provided. The dielectric layer is disposed on the substrate. The first conductive layer is disposed on the dielectric layer. The passivation layer is disposed on the first conductive layer and the dielectric layer. The passivation layer includes a first upper surface and a second upper surface. The first upper surface is located above a top surface of the first conductive layer. The second upper surface is located on one side of the first conductive layer. A height of the first upper surface is higher than a height of the second upper surface. The height of the second upper surface is lower than or equal to a height of a lower surface of the first conductive layer located between a top surface of the dielectric layer and the first conductive layer.

公开(公告)号：US20230136978A1

公开(公告)日：2023-05-04

申请号：US17534419

申请日：2021-11-23

Applicant: United Microelectronics Corp.

Inventor： Chun-Chi Huang ,  Hui-Lung Chou ,  Chuang-Han Hsieh ,  Yung-Feng Lin ,  Shin-Chi Chen

IPC: H01L23/00 ,  H01L23/528

Abstract: A semiconductor structure including a substrate, a dielectric layer, a first conductive layer, and a passivation layer is provided. The dielectric layer is disposed on the substrate. The first conductive layer is disposed on the dielectric layer. The passivation layer is disposed on the first conductive layer and the dielectric layer. The passivation layer includes a first upper surface and a second upper surface. The first upper surface is located above a top surface of the first conductive layer. The second upper surface is located on one side of the first conductive layer. A height of the first upper surface is higher than a height of the second upper surface. The height of the second upper surface is lower than or equal to a height of a lower surface of the first conductive layer located between a top surface of the dielectric layer and the first conductive layer.