公开(公告)号：US08804440B1

公开(公告)日：2014-08-12

申请号：US14225435

申请日：2014-03-26

Applicant: United Microelectronics Corporation

Inventor： Shi-Wen Chen ,  Hsin-Pang Lu ,  Chung-Cheng Tsai ,  Ya-Nan Mou

IPC: G11C7/10 ,  G11C5/14 ,  G11C7/06 ,  G11C11/4074 ,  G11C7/00

CPC classification number: G11C5/147 ,  G11C7/00 ,  G11C7/08 ,  G11C7/10 ,  G11C8/08 ,  G11C11/4074 ,  G11C16/30 ,  G11C29/021

Abstract: A supply voltage generation circuit includes a comparison unit, a voltage level control unit and a voltage regulator circuit. Comparison unit is configured to compare input data and output data of a memory array to each other and thereby generating a comparison result, wherein output data are storage data stored in a plurality of memory units of the memory array processed by a program operation according to the input data, and comparison result indicates the number of different bits existing between the output data and the input data. Voltage level control unit is configured to generate a control signal according to the comparison result. Voltage regulator circuit is configured to provide a supply voltage for the memory array and adjust value of the supply voltage according to the control signal. A memory and an operation method of a supply generation circuit used for a memory array are also provided.

Abstract translation: 电源电压产生电路包括比较单元，电压电平控制单元和电压调节器电路。 比较单元被配置为将存储器阵列的输入数据和输出数据彼此进行比较，从而生成比较结果，其中输出数据是存储在存储器阵列的多个存储器单元中的存储数据，该存储器单元根据根据 输入数据和比较结果表示输出数据和输入数据之间存在的不同位数。 电压电平控制单元被配置为根据比较结果产生控制信号。 电压调节器电路被配置为为存储器阵列提供电源电压，并根据控制信号调整电源电压的值。 还提供了用于存储器阵列的供应生成电路的存储器和操作方法。

公开(公告)号：US20140376316A1

公开(公告)日：2014-12-25

申请号：US13924615

申请日：2013-06-23

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Shi-Wen CHEN ,  Hsin-Pang Lu

IPC: G11C7/14

CPC classification number: G11C7/14 ,  G11C16/28 ,  G11C16/3436 ,  G11C16/3468 ,  G11C16/349

Abstract: A programmable memory cell includes a non-volatile memory unit, a reference current generator and a readout unit. The non-volatile memory unit is configured to be performed by a program operation, a read operation or an erase operation. The reference current generator is configured to generate a reference current; wherein a value of the reference current is dynamically modulated according to a count number of the program and erase operations performed on the non-volatile memory unit. The readout unit, electrically coupled to the non-volatile memory unit and the reference current generator, is configured to read a data stored in the non-volatile memory cell according to the reference current. A data read method applied to the aforementioned programmable memory cell is also provided.

Abstract translation: 可编程存储单元包括非易失性存储单元，参考电流发生器和读出单元。 非易失性存储器单元被配置为通过编程操作，读取操作或擦除操作来执行。 参考电流发生器被配置为产生参考电流; 其中，所述参考电流的值根据对所述非易失性存储器单元执行的所述程序的计数和擦除操作进行动态调制。 电耦合到非易失性存储器单元和参考电流发生器的读出单元被配置为根据参考电流读取存储在非易失性存储单元中的数据。 还提供了应用于上述可编程存储单元的数据读取方法。

公开(公告)号：US20140204686A1

公开(公告)日：2014-07-24

申请号：US14225432

申请日：2014-03-26

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Shi-Wen CHEN ,  Hsin-Pang Lu ,  Chung-Cheng Tsai ,  Ya-Nan Mou

IPC: G11C7/00

CPC classification number: G11C5/147 ,  G11C7/00 ,  G11C7/08 ,  G11C7/10 ,  G11C8/08 ,  G11C11/4074 ,  G11C16/30 ,  G11C29/021

Abstract: A supply voltage generation circuit includes a comparison unit, a voltage level control unit and a voltage regulator circuit. Comparison unit is configured to compare input data and output data of a memory array to each other and thereby generating a comparison result, wherein output data are storage data stored in a plurality of memory units of memory array processed by a program operation according to input data, and the comparison result indicates the number of different bits existing between the output data and the input data. Voltage level control unit is configured to generate a control signal according to the comparison result. Voltage regulator circuit is configured to provide a supply voltage for the memory array and adjust the value of the supply voltage according to the control signal. A memory and an operation method of a supply generation circuit used for a memory array are also provided.

Abstract translation: 电源电压产生电路包括比较单元，电压电平控制单元和电压调节器电路。 比较单元被配置为将存储器阵列的输入数据和输出数据彼此进行比较，从而生成比较结果，其中输出数据是存储在存储器阵列的多个存储器单元中的存储数据，所述存储器单元根据输入数据由程序操作处理 ，比较结果表示输出数据和输入数据之间存在的不同位数。 电压电平控制单元被配置为根据比较结果产生控制信号。 电压调节器电路被配置为提供存储器阵列的电源电压，并根据控制信号调节电源电压的值。 还提供了用于存储器阵列的供应生成电路的存储器和操作方法。

公开(公告)号：US08767485B1

公开(公告)日：2014-07-01

申请号：US14225432

申请日：2014-03-26

Applicant: United Microelectronics Corporation

Inventor： Shi-Wen Chen ,  Hsin-Pang Lu ,  Chung-Cheng Tsai ,  Ya-Nan Mou

IPC: G11C5/14 ,  G11C8/08 ,  G11C7/00 ,  G11C7/10 ,  G11C11/4074 ,  G11C7/08 ,  G11C29/02

CPC classification number: G11C5/147 ,  G11C7/00 ,  G11C7/08 ,  G11C7/10 ,  G11C8/08 ,  G11C11/4074 ,  G11C16/30 ,  G11C29/021

Abstract: A supply voltage generation circuit includes a comparison unit, a voltage level control unit and a voltage regulator circuit. Comparison unit is configured to compare input data and output data of a memory array to each other and thereby generating a comparison result, wherein output data are storage data stored in a plurality of memory units of memory array processed by a program operation according to input data, and the comparison result indicates the number of different bits existing between the output data and the input data. Voltage level control unit is configured to generate a control signal according to the comparison result. Voltage regulator circuit is configured to provide a supply voltage for the memory array and adjust the value of the supply voltage according to the control signal. A memory and an operation method of a supply generation circuit used for a memory array are also provided.

Abstract translation: 电源电压产生电路包括比较单元，电压电平控制单元和电压调节器电路。 比较单元被配置为将存储器阵列的输入数据和输出数据彼此进行比较，从而生成比较结果，其中输出数据是存储在存储器阵列的多个存储器单元中的存储数据，所述存储器单元根据输入数据由程序操作处理 ，比较结果表示输出数据和输入数据之间存在的不同位数。 电压电平控制单元被配置为根据比较结果产生控制信号。 电压调节器电路被配置为提供存储器阵列的电源电压，并根据控制信号调节电源电压的值。 还提供了用于存储器阵列的供应生成电路的存储器和操作方法。