公开(公告)号：US20240044843A1

公开(公告)日：2024-02-08

申请号：US18490329

申请日：2023-10-19

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Reza Abdolvand ,  Hakhamanesh Mansoorzare

IPC: G01N29/04 ,  H10N30/85

CPC classification number: G01N29/041 ,  H10N30/85 ,  H10N30/87

Abstract: Interaction of acoustic waves in a piezoelectric-semiconductor resonant cavity with the charge carriers in the semiconductor layer can be directed toward amplification of the acoustic waves; such amplification scheme can be applied in building unilateral amplifiers, zero loss filters, oscillators, high detection range circuit-less wireless sensors, isolators, duplexers, circulators and other acoustic devices. An apparatus for acoustoelectric amplification is described. The apparatus includes a semiconductor layer and a thin piezoelectric layer bonded (or deposited) onto the semiconductor layer forming an acoustic cavity. Two or more tethers forming a current conduction path through the semiconductor layer and two or more access pads to silicon are positioned on two ends of the acoustic cavity and configured to inject a DC current in the semiconductor layer.

公开(公告)号：US11811237B1

公开(公告)日：2023-11-07

申请号：US18312950

申请日：2023-05-05

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Hakhamanesh Mansoorzare ,  Reza Abdolvand

IPC: H02J50/00 ,  G01N29/24 ,  H02J50/20

CPC classification number: H02J50/001 ,  G01N29/2437 ,  H02J50/20

Abstract: A system and method for converting a radio frequency (RF) to a direct current (DC) signal by generating acoustic phonons from the received RF signal utilizing a piezoelectric material. The acoustic phonons of the RF signal interact with the electrons of a semiconductive material to generate a DC signal that is proportional to the power of the RF signal. The DC signal can be used to power devices or can be interpreted as a measure of a local RF frequency spectrum.

公开(公告)号：US20240250706A1

公开(公告)日：2024-07-25

申请号：US18514389

申请日：2023-11-20

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Hakhamanesh Mansoorzare ,  Reza Abdolvand

IPC: H04B1/04 ,  H03H9/42 ,  H04B1/10

CPC classification number: H04B1/0475 ,  H03H9/423 ,  H04B1/10

Abstract: Systems and devices for a self-interference cancelation scheme that allows for large numbers of delays while maintaining a small size and area. The main components of this scheme include AE delay line arrays (for re-constructing the interference to be subtracted); AE circulators (for providing isolation between the transmitter-to-antenna and antenna-to-receiver paths); and AE couplers (for tapping the signal from the transmit chain to the delay lines). Together, a fully micro-acoustic interference cancelation module is realized in thin-film piezoelectric-semiconductor heterostructures, which are usable in cellular communication devices, base stations, wireless communication modules, and similar transmission/reception systems.

公开(公告)号：US20210018467A1

公开(公告)日：2021-01-21

申请号：US16933098

申请日：2020-07-20

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Reza Abdolvand ,  Hakhamanesh Mansoozare

IPC: G01N29/04 ,  H01L41/18

Abstract: Interaction of acoustic waves in a piezoelectric-semiconductor resonant cavity with the charge carriers in the semiconductor layer can be directed toward amplification of the acoustic waves; such amplification scheme can be applied in building unilateral amplifiers, zero loss filters, oscillators, high detection range circuit-less wireless sensors, isolators, duplexers, circulators and other acoustic devices. An apparatus for acoustoelectric amplification is described. The apparatus includes a semiconductor layer and a thin piezoelectric layer bonded (or deposited) onto the semiconductor layer forming an acoustic cavity. Two or more tethers forming a current conduction path through the semiconductor layer and two or more access pads to silicon are positioned on two ends of the acoustic cavity and configured to inject a DC current in the semiconductor layer.

公开(公告)号：US10892735B2

公开(公告)日：2021-01-12

申请号：US14598891

申请日：2015-01-16

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Reza Abdolvand ,  Seyedeh Hediyeh Fatemi ,  Mohammad Modarres-Zadeh

IPC: H03H9/17 ,  H03H9/02 ,  H04Q9/00 ,  H03H9/15

Abstract: A passive wireless sensor includes a substrate having at least one Microelectromechanical system (MEMS) piezoelectric resonator thereon. The MEMS piezoelectric resonator includes a piezoelectric layer between a top metal or semiconductor layer (top electrode layer) and a bottom metal or semiconductor layer (bottom electrode layer). The top electrode layer is a patterned top electrode layer including at least a first electrode for sensing an electrical signal and a second electrode for providing a ground reference. An antenna is connected to the first and/or second electrode for wirelessly transmitting the electrical signal and for receiving a wireless interrogation signal.

公开(公告)号：US11821872B2

公开(公告)日：2023-11-21

申请号：US16933098

申请日：2020-07-20

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Reza Abdolvand ,  Hakhamanesh Mansoorzare

IPC: H01L41/18 ,  G01N29/04 ,  H10N30/85 ,  H10N30/87

CPC classification number: G01N29/041 ,  H10N30/85 ,  H10N30/87

Abstract: Interaction of acoustic waves in a piezoelectric-semiconductor resonant cavity with the charge carriers in the semiconductor layer can be directed toward amplification of the acoustic waves; such amplification scheme can be applied in building unilateral amplifiers, zero loss filters, oscillators, high detection range circuit-less wireless sensors, isolators, duplexers, circulators and other acoustic devices. An apparatus for acoustoelectric amplification is described. The apparatus includes a semiconductor layer and a thin piezoelectric layer bonded (or deposited) onto the semiconductor layer forming an acoustic cavity. Two or more tethers forming a current conduction path through the semiconductor layer and two or more access pads to silicon are positioned on two ends of the acoustic cavity and configured to inject a DC current in the semiconductor layer.

公开(公告)号：US11162972B2

公开(公告)日：2021-11-02

申请号：US16421082

申请日：2019-05-23

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Reza Abdolvand ,  Hakhamanesh Mansoorzare

IPC: G01P15/125 ,  G01P15/08 ,  G01L9/00

Abstract: A microelectromechanical system (MEMS) sensor includes a substrate having a piezoelectric layer thereon; a MEMS piezoelectric resonator including a reference electrode on a first side of the piezoelectric layer, a first port (port 1) including a capacitor coupling electrode on a side of the piezoelectric layer opposite the first side, and a second port (port 2) for excitation signal coupling including another electrode on the side opposite the first side. The MEMS piezoelectric resonator has a natural resonant frequency. A variable capacitor on the substrate is positioned lateral to the MEMS piezoelectric resonator having a first and a second plate are connected to port 1. An antenna or an oscillator circuit is connected to port 2. Responsive to a physical parameter a capacitance of the variable capacitor changes which changes a frequency of the MEMS piezoelectric resonator relative to the natural resonant frequency to generate a frequency shift.