公开(公告)号：US10910362B2

公开(公告)日：2021-02-02

申请号：US16017978

申请日：2018-06-25

Applicant: University of Electronic Science and Technology of China

Inventor： Ming Qiao ,  Zhao Qi ,  Jiamu Xiao ,  Longfei Liang ,  Danye Liang ,  Bo Zhang

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/08

Abstract: The present invention provides a high voltage ESD protection device including a P-type substrate; a first NWELL region located on the left of the upper part of the P-type substrate; an NP contact region located on the upper part of the first NWELL region; an N+ contact region located on the right of the upper part of the P-type substrate apart from the first NWELL region; a P+ contact region tangential to the right side of the N+ contact region; a NTOP layer arranged on the right of the NP contact region inside the first NWELL region. The NP contact region is connected to a metal piece to form a metal anode. The N+ contact region and the P+ contact region are connected by a metal piece to form a metal cathode.