公开(公告)号：US20230170411A1

公开(公告)日：2023-06-01

申请号：US17714176

申请日：2022-04-06

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Yong CHEN ,  Wenliang LIU ,  Dong FANG ,  Fabei ZHANG ,  Bo ZHANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L21/265 ,  H01L21/266 ,  H01L21/761 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/407 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/761 ,  H01L29/66734

Abstract: A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection. A device structure of the bidirectional conduction trench gate power MOS device has advantages compared with double-transistor series connection used in a conventional BMS and other structures for realizing a bidirectional conduction: firstly, the bidirectional conduction trench gate power MOS device needs to occupy half or less area compared with a conventional mode, improving a degree of integration; secondly, the device structure has a simple manufacturing process and a low manufacturing cost reducing manufacturing problems; thirdly, the drain electrode and the source electrode of the device structure are exchanged to realize a symmetrical structure.