公开(公告)号：US20210305051A1

公开(公告)日：2021-09-30

申请号：US17004031

申请日：2020-08-27

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Shida DONG ,  Zhengkang WANG ,  Dong FANG ,  Zhuo WANG ,  Bo ZHANG

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L21/765 ,  H01L29/66

Abstract: A metal wiring method for reducing gate resistance of a narrow control gate structure, wherein the gate structure is etched with first gate electrodes and second gate electrodes at regular intervals and kept with complete gate electrodes at regular intervals, thereby constituting a structure in which the first and second gate electrodes and the complete gate electrodes are spaced apart. A first contact hole is etched on the complete gate electrode to draw out metal as a first metal layer. A second contact hole is etched on a source region and a split gate to draw out metal as a second metal layer. These two metal layers are separated by a dielectric layer. A multi-point contact of the first layer of metal with the gate electrode in a Y direction reduces the gate resistance caused by an excessively long path in the Y direction of a control gate electrode.

公开(公告)号：US20230170411A1

公开(公告)日：2023-06-01

申请号：US17714176

申请日：2022-04-06

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Yong CHEN ,  Wenliang LIU ,  Dong FANG ,  Fabei ZHANG ,  Bo ZHANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L21/265 ,  H01L21/266 ,  H01L21/761 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/407 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/761 ,  H01L29/66734

Abstract: A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection. A device structure of the bidirectional conduction trench gate power MOS device has advantages compared with double-transistor series connection used in a conventional BMS and other structures for realizing a bidirectional conduction: firstly, the bidirectional conduction trench gate power MOS device needs to occupy half or less area compared with a conventional mode, improving a degree of integration; secondly, the device structure has a simple manufacturing process and a low manufacturing cost reducing manufacturing problems; thirdly, the drain electrode and the source electrode of the device structure are exchanged to realize a symmetrical structure.