公开(公告)号：US20210074699A1

公开(公告)日：2021-03-11

申请号：US16839089

申请日：2020-04-03

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Linrong HE ,  Yi LI ,  Chunlan LAI ,  Bo Zhang

IPC: H01L27/06 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/78 ,  H01L29/739

Abstract: An integrated power semiconductor device, includes devices integrated on a single chip. The devices include a vertical high voltage device, a first high voltage pLDMOS device, a high voltage nLDMOS device, a second high voltage pLDMOS device, a low voltage NMOS device, a low voltage PMOS device, a low voltage NPN device, and a low voltage diode device. A dielectric isolation is applied to the first high voltage pLDMOS device, the high voltage nLDMOS device, the second high voltage pLDMOS device, the low voltage NMOS device, the low voltage PMOS device, the low voltage NPN device, and the low voltage diode device. A multi-channel design is applied to the first high voltage pLDMOS device, and the high voltage nLDMOS device. A single channel design is applied to the second high voltage pLDMOS device.