公开(公告)号：US20180294335A1

公开(公告)日：2018-10-11

申请号：US15623371

申请日：2017-06-14

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaorong LUO ,  Fu PENG ,  Chao YANG ,  Jie WEI ,  Siyu DENG ,  Dongfa OUYANG ,  Bo ZHANG

IPC: H01L29/15 ,  H01L29/06 ,  H01L29/207 ,  H01L29/423 ,  H01L29/78 ,  H01L29/20 ,  H01L29/10

CPC classification number: H01L29/158 ,  H01L29/0615 ,  H01L29/1054 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/7788 ,  H01L29/7827

Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.