公开(公告)号：US11887686B2

公开(公告)日：2024-01-30

申请号：US17357265

申请日：2021-06-24

申请人： University of Florida Research Foundation, Incorporated ,  Washington University

发明人： Yier Jin ,  Yichen Jiang ,  Xuan Zhang ,  Huifeng Zhu ,  Xiaolong Guo

IPC分类号： G06F21/57 ,  G11C11/406 ,  G11C11/4076 ,  G11C29/52 ,  G11C11/4096 ,  G11C7/24 ,  G11C11/4078 ,  G11C29/04 ,  G11C29/20

CPC分类号： G11C29/52 ,  G11C7/24 ,  G11C11/4076 ,  G11C11/4078 ,  G11C11/4096 ,  G11C11/40611 ,  G11C29/04 ,  G11C29/20

摘要： Embodiments provide for predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip including a plurality of memory cells. An example method, determines, for each memory cell of a subset of memory cells of the plurality of memory cells, a leakage time t, a resistance of intrinsic leakage RL based at least in part on the leakage time t, an activation time of an adjacent aggressor row to flip a bit in the memory cell, a resistance of coupling leaking RSW based at least in part on the activation time, and a toggling count. The method identifies, based at least in part on one or more of the RSW, RL, or toggling count, whether the direct random memory access (DRAM) chip is vulnerable to a rowhammer attack.

公开(公告)号：US20210406384A1

公开(公告)日：2021-12-30

申请号：US17357265

申请日：2021-06-24

申请人： University of Florida Research Foundation, Incorporated ,  Washington University

发明人： Yier Jin ,  Yichen Jiang ,  Xuan Zhang ,  Huifeng Zhu ,  Xiaolong Guo

IPC分类号： G06F21/57 ,  G11C11/406 ,  G11C11/4096 ,  G11C11/4076

摘要： Embodiments provide for predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip including a plurality of memory cells. An example method, determines, for each memory cell of a subset of memory cells of the plurality of memory cells, a leakage time t, a resistance of intrinsic leakage RL based at least in part on the leakage time t, an activation time of an adjacent aggressor row to flip a bit in the memory cell, a resistance of coupling leaking RSW based at least in part on the activation time, and a toggling count. The method identifies, based at least in part on one or more of the RSW, RL, or toggling count, whether the direct random memory access (DRAM) chip is vulnerable to a rowhammer attack.

公开(公告)号：US20230339929A1

公开(公告)日：2023-10-26

申请号：US17790211

申请日：2021-01-15

申请人： University of Florida Research Foundation, Incorporated

发明人： Guangrong Zheng ,  Daohong Zhou ,  Xuan Zhang ,  Wanyi HU ,  Xingui Liu ,  Dongwen Lyu ,  Yaxia Yuan ,  Dinesh Thummuri

IPC分类号： C07D417/14 ,  A61K45/06 ,  A61P35/02 ,  A61K31/4725

CPC分类号： C07D417/14 ,  A61K45/06 ,  A61P35/02 ,  A61K31/4725

摘要： The invention is directed towards compounds (e.g., Formula (I) or a pharmaceutically acceptable salt, hydrate, solvate, or prodrug thereof), their mechanism of action, and methods of modulating proliferation activity, and methods of treating diseases and disorders using the compounds described herein (e.g., Formula (I), or a pharmaceutically acceptable salt, hydrate, solvate, or prodrug thereof).

公开(公告)号：US20220169628A1

公开(公告)日：2022-06-02

申请号：US17429207

申请日：2020-02-07

申请人： University of Florida Research Foundation, Incorporated

发明人： Guangrong Zheng ,  Daohong Zhou ,  Pratik Pal ,  Xingui Liu ,  Dinesh Thummuri ,  Wanyi HU ,  Peiyi Zhang ,  Dongwen Lyu ,  Yaxia Yuan ,  Xuan Zhang

IPC分类号： C07D401/04 ,  C07D417/12 ,  A61P35/02 ,  C07D417/14 ,  A61K45/06

摘要： The invention is directed towards compounds (e.g., Formula (I)), their mechanism of action, and methods of modulating proliferation activity, and methods of treating diseases and disorders using the compounds described herein (e.g., Formula (I)).