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Patent Agency Ranking
公开(公告)号：US20210200058A1
公开(公告)日：2021-07-01
申请号：US16492261
申请日：2018-03-09
Applicant: University of Houston System
Inventor： P. Shiv Halasyamani , Hongwei Yu , Hongping Wu , Weiguo Zhang
Abstract: A device comprising a nonlinear optical (NLO) material according to the formula XLi2Al4B6O20F. A device comprising a nonlinear optical material (NLO) according to the formula KSrCO3F, wherein the NLO comprises at least one single crystal. A nonlinear optical material selected from the group consisting of KSrCO3F Rb3Ba3Li2Al4B6O20F and K3Sr3Li2Al4B6O20F.
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公开(公告)号：US10047456B2
公开(公告)日：2018-08-14
申请号：US14717970
申请日：2015-05-20
Applicant: University of Houston System
Inventor： P. Shiv Halasyamani , Weiguo Zhang
IPC: C30B15/36 , C30B9/06 , C30B15/00 , C30B17/00 , C30B29/22 , C30B11/00 , C30B29/10 , H01M4/58 , C30B29/30
Abstract: A monolithic crystal having the atomic formula WnXmYpZr, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.
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公开(公告)号：US11262640B2
公开(公告)日：2022-03-01
申请号：US16492261
申请日：2018-03-09
Applicant: University of Houston System
Inventor： P. Shiv Halasyamani , Hongwei Yu , Hongping Wu , Weiguo Zhang
Abstract: A device comprising a nonlinear optical (NLO) material according to the formula XLi2Al4B6O20F. A device comprising a nonlinear optical material (NLO) according to the formula KSrCO3F, wherein the NLO comprises at least one single crystal. A nonlinear optical material selected from the group consisting of KSrCO3F Rb3Ba3Li2Al4B6O20F and K3Sr3Li2Al4B6O20F.
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公开(公告)号：US20150252490A1
公开(公告)日：2015-09-10
申请号：US14717970
申请日：2015-05-20
Applicant: University of Houston System
Inventor： P. Shiv Halasyamani , Weiguo Zhang
CPC classification number: C30B9/06 , C30B11/003 , C30B15/00 , C30B17/00 , C30B29/10 , C30B29/22 , C30B29/30 , H01M4/5825
Abstract: A monolithic crystal having the atomic formula WnXmYpZr, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.
Abstract translation: 具有至少一个尺寸大于约10mm的原子分子式WnXmYpZr的整体式晶体。 一种用于顶级种子，整体晶体的溶液生长的方法，其中所述方法包括以下步骤：制备前体，形成晶种并形成所述整体晶体。 该方法的一些结构包括对炉中的晶体通量温度的差分控制和晶体通量中晶种的旋转频率。
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公开(公告)号：US20130309472A1
公开(公告)日：2013-11-21
申请号：US13668913
申请日：2012-11-05
Applicant: University of Houston System
Inventor： P. Shiv Halasyamani , Weiguo Zhang
CPC classification number: C30B9/06 , C30B11/003 , C30B15/00 , C30B17/00 , C30B29/10 , C30B29/22 , C30B29/30 , H01M4/5825
Abstract: A monolithic crystal having the atomic formula WnXmYpZr, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.
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