公开(公告)号：US20050106475A1

公开(公告)日：2005-05-19

申请号：US10952559

申请日：2004-09-28

申请人： Uwe Schroeder ,  Oliver Broermann

发明人： Uwe Schroeder ,  Oliver Broermann

IPC分类号： A47G1/12 ,  B44F1/00 ,  G03C5/00 ,  G03F1/48 ,  G03F1/62 ,  G03F9/00 ,  G21K5/00 ,  H01L21/8238

CPC分类号： G03F1/62 ,  G03F1/48

摘要： A lithographic mask having a mask substrate (3) and a patterned mask layer (4) which includes mask structures (5) and can be transferred by lithography to a further substrate is disclosed. With masks of this type, it is customary for a protective layer to be provided in the form of a membrane positioned at a distance from the mask layer (4), in order to keep impurity particles or other impurities away from the focal plane of the mask layer (4). According to the invention, the protective layer (6) is applied in liquid form directly to the mask structures (5) and fills up spaces between the mask structures (4). Then, the protective layer (6), while it is still in the liquid state, is covered with a plane-parallel plate. The continuously dense protective layer (6) which is formed in accordance with the invention is even more reliable in preventing impurity particles or impurities (20) from penetrating into spacers between the structures (5) of the mask layer (4). The impurity particles or impurities (20) can only be deposited on the outer side (16) of the protective layer (6), at a still greater distance from the focal plane.

摘要翻译： 公开了一种具有掩模衬底（3）和包括掩模结构（5）的图案化掩模层（4）并且可以通过光刻转移到另一衬底的光刻掩模。 对于这种类型的掩模，通常保护层以与掩模层（4）相距一定距离的膜的形式提供，以便使杂质颗粒或其它杂质远离所述掩模层（4）的焦平面 掩模层（4）。 根据本发明，保护层（6）以液体形式直接施加到掩模结构（5）并填充掩模结构（4）之间的空间。 然后，保护层（6）仍处于液体状态时被平面平行板覆盖。 根据本发明形成的连续致密保护层（6）在防止杂质颗粒或杂质（20）渗透到掩模层（4）的结构（5）之间的间隔物中是更可靠的。 杂质颗粒或杂质（20）只能在与焦平面更远的距离处沉积在保护层（6）的外侧（16）上。

公开(公告)号：US06980304B2

公开(公告)日：2005-12-27

申请号：US10802728

申请日：2004-03-18

申请人： Oliver Broermann ,  Diana Mattiza ,  Sebastian Schmidt

发明人： Oliver Broermann ,  Diana Mattiza ,  Sebastian Schmidt

IPC分类号： G01N21/956 ,  G03F7/20 ,  G01B11/02

CPC分类号： G03F7/70591 ,  G01N21/95607 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641

摘要： The measurement of the width of a pattern on a semiconductor wafer or a flat panel is carried out in an optical microscope or a scanning electron microscope in a number of measuring steps, By a computing rule, the quality of the correlation between the measured data obtained in the individual measurement steps, as well as reference data taken from the design, the value for the parameter is calculated and compared with a limiting value obtained from experience. In the event of violation of the limiting value, a signal is generated and the further processing of the object is interrupted.

摘要翻译： 在多个测量步骤中，在光学显微镜或扫描电子显微镜中进行半导体晶片或平板上的图案的宽度的测量。通过计算规则，获得的测量数据之间的相关性的质量 在各个测量步骤以及从设计中获取的参考数据中，计算参数值并将其与从经验中获得的极限值进行比较。 在违反限制值的情况下，产生信号并中断对象的进一步处理。

公开(公告)号：US07405024B2

公开(公告)日：2008-07-29

申请号：US10952559

申请日：2004-09-28

申请人： Uwe Paul Schroeder ,  Oliver Broermann

发明人： Uwe Paul Schroeder ,  Oliver Broermann

IPC分类号： G03F1/14

CPC分类号： G03F1/62 ,  G03F1/48

摘要： A lithographic mask having a mask substrate (3) and a patterned mask layer (4) which includes mask structures (5) and can be transferred by lithography to a further substrate is disclosed. With masks of this type, it is customary for a protective layer to be provided in the form of a membrane positioned at a distance from the mask layer (4), in order to keep impurity particles or other impurities away from the focal plane of the mask layer (4). According to the invention, the protective layer (6) is applied in liquid form directly to the mask structures (5) and fills up spaces between the mask structures (4). Then, the protective layer (6), while it is still in the liquid state, is covered with a plane-parallel plate. The continuously dense protective layer (6) which is formed in accordance with the invention is even more reliable in preventing impurity particles or impurities (20) from penetrating into spacers between the structures (5) of the mask layer (4). The impurity particles or impurities (20) can only be deposited on the outer side (16) of the protective layer (6), at a still greater distance from the focal plane.

摘要翻译： 公开了一种具有掩模衬底（3）和包括掩模结构（5）的图案化掩模层（4）并且可以通过光刻转移到另一衬底的光刻掩模。 对于这种类型的掩模，通常保护层以与掩模层（4）相距一定距离的膜的形式提供，以便使杂质颗粒或其它杂质远离所述掩模层（4）的焦平面 掩模层（4）。 根据本发明，保护层（6）以液体形式直接施加到掩模结构（5）并填充掩模结构（4）之间的空间。 然后，保护层（6）仍处于液体状态时被平面平行板覆盖。 根据本发明形成的连续致密保护层（6）在防止杂质颗粒或杂质（20）渗透到掩模层（4）的结构（5）之间的间隔物中是更可靠的。 杂质颗粒或杂质（20）只能在与焦平面更远的距离处沉积在保护层（6）的外侧（16）上。

公开(公告)号：US06897422B2

公开(公告)日：2005-05-24

申请号：US10196834

申请日：2002-07-17

申请人： Oliver Broermann

发明人： Oliver Broermann

IPC分类号： G03F7/20 ,  H01L21/00 ,  G02B7/04

CPC分类号： H01L21/67276 ,  G03F7/70625

摘要： A scanning electron microscope is integrated in a common measuring configuration with at least one device for the angle-dependent measuring of the scattering or diffraction of light. This measuring configuration includes a common transport system, which handles the distribution of semiconductor wafers that are to be measured. The measuring configuration also includes at least one loading and unloading station for providing semiconductor wafers in wafer transport containers. The joint configuration of the two-measuring devices for measuring the critical dimension of a feature allows a mostly contamination-free, rapid, and flexible exchange between the two measuring devices, and furthermore the measuring of lots can be planned in accordance with various measuring strategies. In particular, each semiconductor wafer of a lot can be measured without resorting to sampling strategies. Certainty is enhanced with respect to wafer-to-wafer uniformity, and a greater throughput is achieved.

摘要翻译： 扫描电子显微镜集成在具有至少一个用于光的散射或衍射角度相关测量的装置的通用测量配置中。 该测量配置包括共同的传输系统，其处理待测量的半导体晶片的分布。 测量配置还包括至少一个装载和卸载站，用于在晶片运输容器中提供半导体晶片。 用于测量特征的临界尺寸的两个测量装置的联合构造允许两个测量装置之间的大部分无污染，快速和灵活的交换，此外，可以根据各种测量策略来计划批量 。 特别地，可以在不采取采样策略的情况下测量批次的每个半导体晶片。 相对于晶片到晶片的均匀性，确定性得到增强，并且实现更大的产量。