公开(公告)号：US20230416911A1

公开(公告)日：2023-12-28

申请号：US18253169

申请日：2021-11-15

申请人： VERSUM MATERIALS US, LLC

发明人： RAVINDRA KANJOLIA ,  GUO LIU ,  MARK POTYEN ,  JACOB WOODRUFF ,  BHUSHAN ZOPE ,  XINJIAN LEI

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/40 ,  C23C16/04

CPC分类号： C23C16/45527 ,  H01L21/02164 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02304 ,  C23C16/401 ,  C23C16/04 ,  C23C16/0227

摘要： A thermal atomic layer deposition method for selectively deposition of silicon and oxygen containing dielectric film selected from silicon oxide or carbon doped silicon oxide abundantly on a dielectric surface but not less on a metal surface employing a silicon precursor having at least three isocyanato ligands.